Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-28T22:27:19.542Z Has data issue: false hasContentIssue false
  • English
  • Français

Oxygen Concentration Determination in Silicon Single Crystals by Precision Lattice Parameter Measurement

Published online by Cambridge University Press:  06 March 2019

H. Ohmori ,
M. Tomita ,
N. Tsuchiya  and
Y. Matsushita
H. Ohmori
Affiliation:
Toshiba RSD Center Komukai Toshiba-cho, Saiwai-ku Kawasaki, Kanagawa 210, Japan
M. Tomita
Affiliation:
Toshiba RSD Center Komukai Toshiba-cho, Saiwai-ku Kawasaki, Kanagawa 210, Japan
N. Tsuchiya
Affiliation:
Semiconductor group, Toshiba Corp. Horikawa—cho, Saiwai—ku Kawasaki, Kanagawa 210, Japan
Y. Matsushita
Affiliation:
Semiconductor group, Toshiba Corp. Horikawa—cho, Saiwai—ku Kawasaki, Kanagawa 210, Japan
Get access

Abstract

Precision lattice parameter measurement by the X-ray diffraction method of Bond [1] has been examined as a substitutional method for IR in determining the oxygen concentration in silicon single crystals. Asymmetric 444 CuKai reflections were measured for undoped (100) oriented silicon wafers to obtain the correlation curve between the silicon lattice parameter and oxygen concentration. Precise adjustment of the optical system and computer fitting in determining the peak position allow a minute lattice dilation of silicon due to oxygen to be detected by the Bond method. The precision of this measurement system was of the order of 10-6. The lattice expansion of silicon by dissolved oxygen was determined to be at the rate of 3.2X10-24 atoms of oxygen per cm3. Furthermore, the oxygen concentrations of heavily Sb-doped silicon wafers were determined nondestructively.

Type
XI. Thin Film and Semiconductor Characterization by X-Ray Diffraction
Information
Advances in X-Ray Analysis , Volume 34: Thirty-Ninth Annual Conference on Applications of X-ray Analysis, July 30 - August 3, 1990 , 1990 , pp. 577 - 586
Copyright
Copyright © International Centre for Diffraction Data 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Bond, R. L., Precision Lattice Constant Determination, Acta Cryst. 13: 814 (1960).10.1107/S0365110X60001941Google Scholar
[2] Okada, Y. and Tokumaru, Y., Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500K, J. Appl. Phys. 55: 314 (1984).Google Scholar
[3] Nakajima, N., Saitoh, T., Inada, T., Fukuda, T. and Ishida, K., Study of nonstoichiometry in undoped semiinsulat ing GaAs using precise lattice parameter measurements, Appl. Phys. Lett, 49: 1251 (1936).Google Scholar
[4] Kuwamoto, H. and Holmes, D. E., Correlation of GaAs lattice parameter to growth and annealing conditions, J. Appl. Phys. 59: 656 (1986).10.1063/1.336628Google Scholar
[5] Watson, G. P. and Ast, D., Variation of lattice parameter with silicon concentration in n-doped, liquid-encapsulated Czochralski GaAs single crystals, Appl. Phys. Lett. 54: 271 (1989).Google Scholar
[6] Takano, Y. and Maki, M., DIFFUSION OF OXYGEN IN SILICON, in: ‘Semiconductor Silicon/1373”, H. R. Huff and R. R. Burgess, eds., p.469, The Electrochemical Society Softbound Proceedings Series, Pennington, NJ (1973).Google Scholar
[7] Yasuami, S., Usuda, K., Higashi, Y., Kawata, H. and Ando, M., LATTICE SPACINGS OF LEC-GROWN AND MLEC-GROWN GaAs CRYSTALS, J. Cryst. Growth 100: 600 (1990).Google Scholar
[8] Buillis, W. M., Watanabe, M., Baghdadi, A., Li, Y. Z., Scace, R. I., Series, R. W. and P. Stallhofer, Committee on Measurement of Oxygen in Silicon, in: “Semiconductor Silicon/1986,” H. R. Huff, T. Abe and B. Kolbesen, eds., p. 166, The Electrochemical Society Softbound Proceedings Series, Pennington, NJ (1986).Google Scholar
[9] Burke, J. and Tomkeieff, M. V., Errors in the Bond Method of Lattice Parameter Determinations Further - Considerations, Acta Cryst. A24: 683 (1968).Google Scholar
[10] Nemiroff, M., Precise Lattice Constant Determination Using Measured Beam and Crystal Tilts, J. Appl. Cryst. 15: 375 (1982).Google Scholar
[11] Okada, Y., Tokumaru, Y. and Kadota, Y., Dependence of lattice parameter on elastic strain and composition in undoped Czochralski grown GaAs, Appl. Phys. Lett. 48: 975 (1986).Google Scholar
[12] Pierron, E. D. and McNeely, J. B., PRECISE CELL PARAMETERS OF SEMICONDUCTOR CRYSTALS AND THEIR APPLICATIONS, Adv. X-ray Anal. 12: 343 (1968).Google Scholar
[13] Deslattes, R. D. and Hennis, A., X-Ray to Visible Wavelength Ratios, Phys. Rev. Lett. 31: 972 (1973).Google Scholar
[14] Yagi, K., Miyamoto, N. and Nishdzawa, J., Anomalous Diffusion of Phosphorus into Silicon, Jpn. J. Appl. Phys. 9: 246 (1970)Google Scholar