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X-ray Characterization of Thin Diamond Films Deposited by Hot-Filament Chemical Vapor Deposition

Published online by Cambridge University Press:  06 March 2019

Richard F. Hamilton ,
Diwakar Garg ,
Keith A. Wood  and
David S. Hoover
Richard F. Hamilton
Affiliation:
Air Products and Chemieals, Inc. 7201 Hamilton Boulevard Allentown, PA 18195
Diwakar Garg
Affiliation:
Air Products and Chemieals, Inc. 7201 Hamilton Boulevard Allentown, PA 18195
Keith A. Wood
Affiliation:
Air Products and Chemieals, Inc. 7201 Hamilton Boulevard Allentown, PA 18195
David S. Hoover
Affiliation:
Air Products and Chemieals, Inc. 7201 Hamilton Boulevard Allentown, PA 18195
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Abstract

Synthesizing thin diamond films by chemical vapor deposition (CVD) is the most recent and technologically important development in the thin-film field. Thin diamond films are useful in many applications because of their unique physical, chemical, optical, and electronic properties.

To assess thin diamond films’ suitability for support membranes in X-ray lithography, X-ray diffraction was used to characterize the crystal structure and orientation of these films deposited on silicon wafers by hot-filament assisted CVD. X-ray transmission properties of free-standing thin diamond films prepared by selectively etching silicon substrates were characterized by X-ray fluorescence in short and long wavelength regions.

This paper discusses conventional and grazing incidence diffraction techniques used to study the crystal structure of thin diamond films and compares the results with film morphology. It also describes X-ray transmission properties of these films in terms of Beer's Law, the mass absorption coefficient, and the wavelength of attenuated radiation. Finally, it reveals the long wavelength regions for optimum X-ray lithography operations using polycrystalline diamond (PCD) film.

Type
XI. Thin Film and Semiconductor Characterization by X-Ray Diffraction
Information
Advances in X-Ray Analysis , Volume 34: Thirty-Ninth Annual Conference on Applications of X-ray Analysis, July 30 - August 3, 1990 , 1990 , pp. 543 - 555
Copyright
Copyright © International Centre for Diffraction Data 1990

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References

1. Peters, M. G., Knowles, J. L., Breen, M., and McCarthy, J., “Ultra-Thin Diamond Films for X-ray Window Applications,” Proc. SPIE-Int. Soc. Opt. Eng., Vol. 1146 Diamond Optics II, 217-224, (1989).Google Scholar
2. Friedrich, D., Bernt, H., Huber, H. L., windbracke, W., and Zwicker, G., “Fabrication of 0.5 μm MOS Test Devices by Application of X-ray Lithography at All Levels,” Proc. SPIE-Int. Soc. Opt. Eng., Vol. 1089 Electron Beam, X-Ray, and Ion-Beam Technology: submicrometer Lithographies VIII, 202-209, (1989).Google Scholar
3. Peters, D. W., “Performance of a Laser-Based Soft X-Ray Stepper,” in Microelectronic Manufacturing and Testing, pp. 7-8, (June 1988).Google Scholar
4. Rankin, B., “Perkin-Elmer Pioneers in X-Ray Lithography,” in New Technology Week, p. 5, (Feb. 6, 1989).Google Scholar
5. Ohki, S., Kakuchi, H., Matsuda, T., Ozawa, A., Ohkubo, T., Ods, M., and Yoshinara, H., “Ta/SiN-Structure X-ray Masks for Sub-Half-Micron LSIs.” Jap. J. of Appl. Phys. 28. 2074–2079, (1989).Google Scholar
6. Aiyert, C. R. Gangal, S. A., Montasser, K., Horita, S., and Hattori, S., “Effect of Mixing Oxygen or Diborane on the Formation of Amorphous Carbon Films from Methane by R. F. Plasma chemical vapor Deposition,” Thin Solid Films 163, 229–232 (1988).Google Scholar
7. Yamada, K., Nakaishi, M., Kudou, J., Eshita, T., and Furumura, Y., “An X-Ray Mask Using Ta and Heteroepifcaxially Grown Sic,” Microelectronic Engineering 9, 135–138, (1989).Google Scholar
8. Yanof, A. W., Resnick, D. J., Jankoski, C. A., and Johnson, W. A., “X-Ray Bask Distortion: Process and Pattern Dependence,” Proc. SPIE-Int. Soc. Opt. Eng., Vol. 632, Electron-Beam, X-Ray, and Ion-Beam Techniques for submicrometer Lithographies V, 118-132, (1986).Google Scholar
9. Segmuller, A., “Characterization of Epitaxial Films by X-Ray Diffraction,” Adv. X-Ray Analysis 29, Plenum Press, NY, 353–366, (1986).Google Scholar
10. Jenkins, R., “Modern Powder Diffraction,” p. 24, Reviews in MineralORY 20, D. L. Bish and J. E. Post, ed., Mineralogical Society of America (1989).Google Scholar
11. Matyi, R. J.,” characterization of WSi and TiSi Thin Films with a Fully Automated Seeman-Bohlin Diffractometer,” Adv. x-Ray Analysis 29, Plenum Press, NY, 375–380, (1986).Google Scholar
12. Iyengar, S. S., Santana, M. W., Windischamm, H., and Engler, P., “Analysis of Surface Layers and Thin Films by Low Incident Angle X-Ray Diffraction,” Adv. X-Ray Analysis 30, Plenum Press, NY, 457–464, (1987).Google Scholar
13. Jenkins, R. and de Vries, J. L., “Practical X-Ray Spectrometry,” 2nd Ed., Springer-Verlag, NY, p. 13, (1970).Google Scholar
14. Bertin, E. P., “Principles and Practice of X-Ray Spectrometric Analysis,” 2nd Ed., Plenum Press, NY, Appendix 7A, (1975).Google Scholar
15. Cullity, B. D., “Elements of X-Ray Diffraction,” 2nd Ed., Addison-Wesley, Reading, MA, 1978, p. 102.Google Scholar
16. Solazzi, M. J., “X-ray Fluorescence Thin-Film Sample Support Materials,” American Laboratory, pp. 124–131, (November 1985).Google Scholar