Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-10T10:40:13.525Z Has data issue: false hasContentIssue false
  • English
  • Français

Dual-band impedance transformation networks for integrated power amplifiers

Published online by Cambridge University Press:  10 November 2014

Robert Wolf ,
Niko Joram ,
Stefan Schumann  and
Frank Ellinger
Robert Wolf
Affiliation:
Chair for Circuit Design and Network Theory, Technische Universität Dresden, 01062 Dresden, Germany. Phone: +49 351 463 33919
Niko Joram*
Affiliation:
Chair for Circuit Design and Network Theory, Technische Universität Dresden, 01062 Dresden, Germany. Phone: +49 351 463 33919
Stefan Schumann
Affiliation:
Chair for Circuit Design and Network Theory, Technische Universität Dresden, 01062 Dresden, Germany. Phone: +49 351 463 33919
Frank Ellinger
Affiliation:
Chair for Circuit Design and Network Theory, Technische Universität Dresden, 01062 Dresden, Germany. Phone: +49 351 463 33919
*
Corresponding author: N. Joram, Email: niko.joram@tu-dresden.de
Get access Rights & Permissions [Opens in a new window]

Abstract

This paper shows that the two most common impedance transformation networks for power amplifiers (PAs) can be designed to achieve optimum transformation at two frequencies. Hence, a larger bandwidth for the required impedance transformation ratio is achieved. A design procedure is proposed, which takes imperfections like losses into account. Furthermore, an analysis method is presented to estimate the maximum uncompressed output power of a PA with respect to frequency. Based on these results, a fully integrated PA with a dual-band impedance transformation network is designed and its functionality is proven by large signal measurement results. The amplifier covers the frequency band from 450 MHz to 1.2 GHz (3 dB bandwidth of the output power and efficiency), corresponding to a relative bandwidth of more than 100%. It delivers 23.7 dBm output power in the 1 dB compression point, having a power-added efficiency of 33%.

Keywords

Power amplifiers and linearizersModelingSimulation and characterizations of devices and circuits
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 8 , Issue 1 , February 2016 , pp. 1 - 7
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Haldi, P.; Chowdhury, D.; Reynaert, P.; Liu, G.; Niknejad, A.: A 5.8 GHz 1 V linear power amplifier using a novel on-chip transformer power combiner in standard 90 nm CMOS. IEEE J. Solid-State Circuits, 43 (5) (2008), 1054–1063.CrossRefGoogle Scholar
[2]Martins, M.; Fernandes, J.; Silva, M.: Dual-band CMOS low-noise amplifier without switches and with continuously adjustable gain. Electron. Lett., 43 (17) (2007), 920–921.CrossRefGoogle Scholar
[3]Silicon Storage Technology. 2.4–2.5 GHz/4.9–5.8 GHz dual-band power amplifier module SST13LP05. Datasheet, 2009.Google Scholar
[4]Bischof, W. et al. : SiGe-power amplifiers in flipchip and packaged technology, in IEEE Radio Frequency Integrated Circuits (RFIC) Symp. Digest of Papers, 2001, 35–38.Google Scholar
[5]Uchida, K.; Takayama, Y.; Fujita, T.; Maenaka, K.: Dual-band GaAs FET power amplifier with two-frequency matching circuits, in Asia-Pacific Microwave Conf. Proc. (APMC), vol. 1, 2005, 4.Google Scholar
[6]Ghajar, M.; Boumaiza, S.: Concurrent dual band 2.4/3.5 GHz fully integrated power amplifier in 0.13 µm CMOS technology, in Eur. Microwave Integrated Circuits Conf. (EuMIC), 2009, 375–378.Google Scholar
[7]Cripps, S.C.: RF power amplifiers for wireless communications, 2nd ed., Artech House, Norwood, 2006.Google Scholar
[8]Vielhauer, P.: Lineare Netzwerke, 1st ed., VEB Verlag Technik, Berlin, 1982.Google Scholar
[9]Maxim Integrated: MAX2232, MAX2233 power amplifier. Datasheet, 2000.Google Scholar
[10]Francois, B.; Reynaert, P.: A Fully integrated watt-level linear 900-MHz CMOS RF power amplifier for LTE-applications. IEEE Trans. Microw. Theory Tech., 60 (6) (2012), 1878–1885.CrossRefGoogle Scholar
[11]Solomko, V.; Weger, P.: A Fully Integrated 3.3–3.8 GHz power amplifier with autotransformer Balun. IEEE Trans. Microw. Theory Tech., 57 (9) (2009), 2160–2172.Google Scholar
[12]Fritsche, D.; Wolf, R.; Ellinger, F.: Analysis and design of a stacked power amplifier with very high bandwidth. IEEE Trans. Microw. Theory Tech., 60 (10) (2012), 3223–3231.CrossRefGoogle Scholar