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Enhanced performance of a 60-GHz power amplifier by using slow-wave transmission lines in 40 nm CMOS technology

Published online by Cambridge University Press:  11 October 2011

Xiao-Lan Tang ,
Emmanuel Pistono ,
Philippe Ferrari  and
Jean-Michel Fournier
Xiao-Lan Tang*
Affiliation:
IMEP-LAHC, Université de Grenoble, Minatec, 3 Parvis Louis Néel, 38016 Grenoble Cedex 1, France. Phone: +33 04 56 52 95 48
Emmanuel Pistono
Affiliation:
IMEP-LAHC, Université de Grenoble, Minatec, 3 Parvis Louis Néel, 38016 Grenoble Cedex 1, France. Phone: +33 04 56 52 95 48
Philippe Ferrari
Affiliation:
IMEP-LAHC, Université de Grenoble, Minatec, 3 Parvis Louis Néel, 38016 Grenoble Cedex 1, France. Phone: +33 04 56 52 95 48
Jean-Michel Fournier
Affiliation:
IMEP-LAHC, Université de Grenoble, Minatec, 3 Parvis Louis Néel, 38016 Grenoble Cedex 1, France. Phone: +33 04 56 52 95 48
*
Corresponding author: X. Tang Email: tangx@minatec.inpg.fr
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Abstract

This paper shows the contribution of slow-wave coplanar waveguides on the performance of power amplifiers operating at millimeter-wave frequencies in CMOS-integrated technologies. These transmission lines present a quality factor Q two to three times higher than that of the conventional microstrip lines at the same characteristic impedance. To demonstrate the contribution of the slow-wave transmission lines on integrated millimeter-wave amplifiers performance, two Class-A single-stage power amplifiers (PA) operating at 60 GHz were designed in standard 40 nm CMOS technology. One of the power amplifiers incorporates only the microstrip lines, whereas slow-wave coplanar transmission lines are considered in the other one. Both amplifiers are biased in Class-A operation, drawing, respectively, 22 and 23 mA from 1.2 V supply. Compared to the power amplifier using conventional microstrip transmission lines, the one implemented with slow-wave transmission lines shows improved performances in terms of gain (5.6 dB against 3.3 dB), 1 dB output compression point (OCP1dB: 7 dBm against 5 dBm), saturated output power (Psat: >10 and 8 dBm, respectively), power-added efficiency (PAE: 16% instead of 6%), and die area without pads (Sdie: 0.059 mm2 against 0.069 mm2).

Keywords

Slow-wave transmission lineCMOSmillimeter-wavepower amplifier
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 4 , Special Issue 1: IJMWT Special Issue on the 2011 National Microwave Days in France , February 2012 , pp. 93 - 100
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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