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Study of high efficiency, low noise sputtered magnetron's cathode using GaN and SiC semiconductors for modulated microwave power transmission

Published online by Cambridge University Press:  08 April 2021

Leong Wen Chek Open the ORCID record for Leong Wen Chek [Opens in a new window] ,
Saad Mekhilef  and
Harikrishnan Ramiah
Leong Wen Chek*
Affiliation:
Power Electronics and Renewable Energy Research Laboratory, Department of Electrical, Faculty of Engineering, University of Malaya, 50603Kuala Lumpur, Malaysia
Saad Mekhilef*
Affiliation:
Power Electronics and Renewable Energy Research Laboratory, Department of Electrical, Faculty of Engineering, University of Malaya, 50603Kuala Lumpur, Malaysia Faculty of Science, Engineering and Technology, School of Software and Electrical Engineering, Swinburne University of Technology, Victoria, VIC3122, Australia
Harikrishnan Ramiah
Affiliation:
Department of Electrical, Faculty of Engineering, University of Malaya, 50603Kuala Lumpur, Malaysia
*
Author for correspondence: Saad Mekhilef, Leong Wen Chek, E-mails: leong@um.edu.my, saad@um.edu.my
Author for correspondence: Saad Mekhilef, Leong Wen Chek, E-mails: leong@um.edu.my, saad@um.edu.my
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Abstract

Semiconductor deposition on magnetron's cathode surface using different materials such as gallium nitride (GaN) and silicon carbide (SiC) semiconductors is conducted to grow approximately 80, 100 and 120 nm plasma layers. The cathode is then used to generate high frequency and low-power microwave for further comparison and analysis with the conventional magnetron operation. Parameter of analysis to identify the efficiency includes electron drift velocity, harmonic order, total harmonic distortion, low harmonic distortion, and spectrum observation. The sputtered cathode of the magnetron is used to generate a low-power microwave observing a generator efficiency up to 93 and 88% for GaN and SiC materials, respectively, compared to the conventional material, which observes 37% of efficiency at 2450 MHz, 5 W. Also reported is the quality of semiconductor sputtering on the magnetron cathode, which was manipulated by the deposition period, temperature, and plasma layer growth thickness.

Keywords

Electromagnetic compatibilitywireless power transfer and energy harvesting
Type
Active Circuits
Information
International Journal of Microwave and Wireless Technologies , Volume 14 , Issue 4 , May 2022 , pp. 417 - 425
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Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press in association with the European Microwave Association

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