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Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs

Published online by Cambridge University Press:  07 April 2016

Agostino Benvegnù ,
Davide Bisi ,
Sylvain Laurent ,
Matteo Meneghini ,
Gaudenzio Meneghesso ,
Denis Barataud ,
Enrico Zanoni  and
Raymond Quere
Agostino Benvegnù*
Affiliation:
XLIM – CNRS–University of Limoges 123, Avenue Albert Thomas, 87060 Limoges Cedex, France. Phone: +33555457745 Department of Information Engineering, University of Padova, Via Gradenigo 6/A, 35131 Padova, Italy
Davide Bisi
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6/A, 35131 Padova, Italy
Sylvain Laurent
Affiliation:
XLIM – CNRS–University of Limoges 123, Avenue Albert Thomas, 87060 Limoges Cedex, France. Phone: +33555457745
Matteo Meneghini
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6/A, 35131 Padova, Italy
Gaudenzio Meneghesso
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6/A, 35131 Padova, Italy
Denis Barataud
Affiliation:
XLIM – CNRS–University of Limoges 123, Avenue Albert Thomas, 87060 Limoges Cedex, France. Phone: +33555457745
Enrico Zanoni
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6/A, 35131 Padova, Italy
Raymond Quere
Affiliation:
XLIM – CNRS–University of Limoges 123, Avenue Albert Thomas, 87060 Limoges Cedex, France. Phone: +33555457745
*
Corresponding author:A. Benvegnù Email: agostino.benvegnu@xlim.fr
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Abstract

This paper presents a detailed trap investigation based on combined pulsed I/V measurements, drain current transient (DCT) measurements and low-frequency dispersion measurements of transconductance (LF Y21) and output conductance (LF Y22). DCT characterization is carried out over a 7-decade time scale. LF Y21 and Y22 measurements are carried out over the frequency range from 100 Hz to 1 GHz. These combined measurements were performed at several temperatures for AlGaN/GaN high electron mobility transistors under class AB bias condition and allowed the extraction of the activation energy (Ea) and the capture cross section (σc) of the identified traps. Extensive measurements of these characteristics as a function of device bias are reported in this work to understand the dynamic trap behavior. This paper demonstrated a correlation between LF small-signal (LF Y21 and Y22) and large-signal voltage steps (DCT) results. These measurements allow identifying the same 0.64 eV deep level, attributed to a native defect of GaN, possibly located in the buffer layer.

Keywords

Deep level transient spectroscopy (DLTS)Transcondutance frequency dispersionOutput conductance frequency dispersionDefectsGallium nitrideHigh electron mobility transistor (HEMT)Trap levels
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 8 , Special Issue 4-5: EuMW 2015 Special Issue , June 2016 , pp. 663 - 672
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2016 

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References

REFERENCES

[1] Binari, S.C.; Klein, P.B.; Kazior, T.E.: Trapping effects in GaN and SiC microwave FETs. Proc. IEEE, 90 (6) (2002), 1048–1058.Google Scholar
[2] Vetury, R.; Zhang, N.Q.; Keller, S.; Mishra, U.K.: The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs. IEEE Trans. Electron Devices, 48 (3) (2001), 560–566.Google Scholar
[3] Meneghesso, G.; Meneghini, M.; Tazzoli, A.; Ronchi, N.; Stocco, A.; Chini, A.; Zanoni, E.: Reliability issues of gallium nitride high electron mobility transistors. Int. J. Microw. Wireless Technol., 2 (01) (2010), 39.Google Scholar
[4] Meneghini, M.; Ronchi, N.; Stocco, A.; Meneghesso, G.; Mishra, U.; Pei, Y.; Zanoni, E.: Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electrooptical method. IEEE Trans. Electron Devices, 58 (9) (2011), 2996–3003.CrossRefGoogle Scholar
[5] Joh, J.; Del Alamo, J.A.: A current-transient methodology for trap analysis for GaN high electron mobility transistors. IEEE Trans. Electron Devices, 58 (1) (2011), 132–140.Google Scholar
[6] Tartarin, J.G.; Karboyan, S.; Olivie, F.; Astre, G.; Bary, L.; Lambert, B.: I-DLTS, electrical lag and low frequency noise measurements of trapping effects in AlGaN/GaN HEMT for reliability studies, in Microwave Integrated Circuits Conf. (EuMIC), 2011 European, 2011, 438–441.Google Scholar
[7] Bisi, D.; Meneghini, M.; de Santi, C.; Chini, A.; Dammann, M.; Bruckner, P.; Mikulla, M.; Meneghesso, G.; Zanoni, E.: Deep-level characterization in GaN HEMTs-part I: advantages and limitations of drain current transient measurements. IEEE Trans. Electron Devices, 60 (10) (2013), 3166–3175.CrossRefGoogle Scholar
[8] Umana-Membreno, G.A.; Dell, J.M.; Nener, B.D.; Faraone, L.; Parish, G.; Wu, Y.-F.; Mishra, U.K.: Low-temperature shallow-trap related output-admittance frequency dispersion in AlGaN/GaN MODFETs, in 1998 Conf. on Optoelectronic and Microelectronic Materials Devices, Proc., 1998, 252–255.CrossRefGoogle Scholar
[9] Potier, C.; Martin, A.; Campovecchio, M.; Laurent, S.; Quere, R.; Jacquet, J.C.; Jardel, O.; Piotrowicz, S.; Delage, S.: Trap characterization of microwave GaN HEMTs based on frequency dispersion of the output-admittance, in European Microwave Conf. (EuMC), 2014 44th, 2014, 1408–1411.CrossRefGoogle Scholar
[10] Nsele, S.D.; Escotte, L.; Tartarin, J.-G.; Piotrowicz, S.; Delage, S.L.: Broadband frequency dispersion small-signal modeling of the output conductance and transconductance in AlInN/GaN HEMTs. IEEE Trans. Electron Devices, 60 (4) (2013), 1372–1378.Google Scholar
[11] Benvegnu, A.; Laurent, S.; Meneghini, M.; Meneghesso, G.; Muraro, J.-M.; Barataud, D.; Zanoni, E.; Quere, R.: Trap characterization of AlGaN/GaN HEMTs through drain current measurements under Pulsed-RF Large-Signal excitation, in IEEE Int. Microwave Symp., May 2015.Google Scholar
[12] Jardel, O.; Laurent, S.; Reveyrand, T.; Quéré, R.; Nakkala, P.; Martin, A.; Piotrowicz, S.; Campovecchio, M.; Delage, S.L.: Modeling of trap induced dispersion of large signal dynamic characteristics of GaN HEMTs, in IEEE Int. Microwave Symp., 2013.Google Scholar
[13]Pulsed IV Bilt AMCAD System datasheet, http://www.amcad-engineering.com/IMG/File/PIV%20Gate%20and%20Drain%20Probe%20Heads%20Specifications.pdf Google Scholar
[14] Joh, J.; Del Alamo, J.A.; Chowdhury, U.; Chou, T.-M.; Tserng, H.-Q.; Jimenez, J.L.: Measurement of channel temperature in GaN high-electron mobility transistors. IEEE Trans. Electron Devices, 56 (12) (2009), 2895–2901.Google Scholar
[15] El Rafei, A.; Callet, G.; Mouginot, G.; Faraj, J.; Laurent, S.; Prigent, M.; Quéré, R.; Jardel, O.; Delage, S.: DC (10 Hz) to RF (40 GHz) output conduction extraction by S-parameters measurements for in-depth characterization of AlInN/GaN HEMTS, focusing on low frequency dispersion effects, in Microwave Integrated Circuits Conf. (EuMIC), 2011 European, 2011, 5–8.Google Scholar
[16] Frickey, D.A.: “Conversions between S, Z, Y, H, ABCD, and T parameters which are valid for complex source and load impedances. IEEE Trans. Microw. Theory Tech., 42 (2) (1994), 205–211.Google Scholar
[17] Golio, M.; Miller, M.G.; Maracas, G.N.; Johnson, D.A.: Frequency-dependent electrical characteristics of GaAs MESFETs. IEEE Trans. Electron Devices, 37 (5) (1990), 1217–1227.Google Scholar
[18] Islam, S.S.; Anwar, A.F.M.; Webster, R.T.: A physics-based frequency dispersion model of GaN MESFETs. IEEE Trans. Electron Devices, 51 (6) (2004), 846–853.CrossRefGoogle Scholar
[19] Hacke, P.; Detchprohm, T.; Hiramatsu, K.; Sawaki, N.; Tadatomo, K.; Miyake, K.: Analysis of deep levels in n type GaN by transient capacitance methods. J. Appl. Phys., 76 (1) (1994), 304–309.Google Scholar
[20] Auret, F.D.; Goodman, S.A.; Koschnick, F.K.; Spaeth, J.-M.; Beaumont, B.; Gibart, P.: Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation. Appl. Phys. Lett., 73 (25) (1998), 3745–3747.Google Scholar
[21] Wang, C.D.; Yu, L.S.; Lau, S.S.; Yu, E.T.; Kim, W.; Botchkarev, A.E.; Morkoc, H.: Deep level defects in n-type GaN grown by molecular beam epitaxy. Appl. Phys. Lett., 72 (10) (1998), 1211–1213.Google Scholar
[22] Shmidt, N.M.; Davidov, D.V.; Emtsev, V.V.; Krestnikov, I.L.; Lebedev, A.A.; Lundin, W.V.; Poloskin, D.S.; Sakharov, A.V.; Usikov, A.S.; Osinsky, A.V.: Effect of annealing on defects in as-grown and symbol (g)-ray irradiated n-GaN layers. Phys. Status Solidi (B), 216 (1) (1999), 533–536.3.0.CO;2-S>CrossRefGoogle Scholar
[23] Chung, H.M.; Chuang, W.C.; Pan, Y.C.; Tsai, C.C.; Lee, M.C.; Chen, W.H.; Chen, W.K.; Chiang, C.I.; Lin, C.H.; Chang, H.: Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy. Appl. Phys. Lett., 76 (7) (2000), 897–899.Google Scholar
[24] Fang, Z.-Q.; Polenta, L.; Hemsky, J.W.; Look, D.C.: Deep centers in as-grown and electron-irradiated n-GaN, in Proc. SIMC Int., July 2000, 35–42.Google Scholar
[25] Umana-Membreno, G.A.; Dell, J.M.; Hessler, T.P.; Nener, B.D.; Parish, G.; Faraone, L.: 60 Co gamma-irradiation-induced defects in n-GaN. Appl. Phys. Lett., 80 (23) (2002), 4354–4356.Google Scholar
[26] Asghar, M.; Muret, P.; Beaumont, B.; Gibart, P.: Field dependent transformation of electron traps in GaN p-n diodes grown by metal–organic chemical vapor deposition. Mater. Sci. Eng. B, 113 (3) (2004), 248–252.Google Scholar
[27] Osaka, J.; Ohno, Y.; Kishimoto, S.; Maezawa, K.; Mizutani, T.: Deep levels in n-type AlGaN grown by hydride vapor-phase epitaxy on sapphire characterized by deep-level transient spectroscopy. Appl. Phys. Lett., 87 (22) (2005), 222112-1–222112-3.Google Scholar
[28] Hogsed, M.R.: Deep level defects in electron-irradiated aluminum gallium nitride grown by molecular beam epitaxy. Ph.D. dissertation, Department of Air Force, Air Force Institute of Technology, Wright Ptrsn, OH, USA, 2005.Google Scholar
[29] Armstrong, A.M.: Investigation of deep level defects in GaN:C, GaN:Mg and pseudomorphic AlGaN/GaN films. Ph.D. dissertation, Dept. Electr. Comput. Eng., Ohio State Univ., Columbus, OH, USA, 2006.Google Scholar
[30] Umana-Membreno, G.A.; Parish, G.; Fichtenbaum, N.; Keller, S.; Mishra, U.K.; Nener, B.D.: Electrically active defects in GaN layers grown with and without Fe-doped buffers by metal-organic chemical vapor deposition. J. Electron. Mater., 37 (5) (2008), 569–572.Google Scholar
[31] Arehart, A.R.; Corrion, A.; Poblenz, C.; Speck, J.S.; Mishra, U.K.; DenBaars, S.P.; Ringel, S.A.: Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films. Phys. Status Solidi C, 5 (6) (2008), 1750–1752.Google Scholar
[32] Kindl, D.; Hubík, P.; Krištofik, J.; Mareš, J.J.; Výborný, Z.; Leys, M.R.; Boeykens, S.: Deep defects in GaN/AlGaN/SiC heterostructures. J. Appl. Phys., 105 (9) (2009), 093706-1–093706-8.CrossRefGoogle Scholar
[33] Polyakov, A.Y.; Smirnov, N.B.; Govorkov, A.V.; Markov, A.V.; Sun, Q.; Zhang, Y.; Yerino, C.D.; Ko, T.-S.; Lee, I.-H.; Han, J.: Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire. Mater. Sci. Eng. B, 166 (3) (2010), 220–224.Google Scholar
[34] Park, Y.S.; Lee, M.; Jeon, K.; Yoon, I.T.; Shon, Y.; Im, H.; Park, C.J.; Cho, H.Y.; Han, M.-S.: Deep level transient spectroscopy in plasma assisted molecular beam epitaxy grown Al0.2Ga0.8N/GaN interface and the rapid thermal annealing effect. Appl. Phys. Lett., 97 (11) (2010), 112110-1–112110-3.CrossRefGoogle Scholar
[35] Arehart, A.R.; Homan, T.; Wong, M.H.; Poblenz, C.; Speck, J.S.; Ringel, S.A.: Impact of N-and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy. Appl. Phys. Lett., 96 (24) (2010), 242112-1–242112-3.Google Scholar
[36] Arehart, A.R.; Allerman, A.A.; Ringel, S.A.: Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes. J. Appl. Phys., 109 (11) (2011), 114506-1–114506-10.Google Scholar
[37] Kamyczek, P.; Placzek-Popko, E.; Kolkovsky, V.; Grzanka, S.; Czernecki, R.: A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN. J. Appl. Phys., 111 (11) (2012), 113105-1–113105-7.Google Scholar
[38] Verzellesi, G.; Mazzanti, A.; Canali, C.; Meneghesso, G.; Chini, A.; Zanoni, E.: Study on the origin of dc-to-RF dispersion effects in GaAs-and GaN-based beterostructure FETs,” in GaAs Reliability Workshop, 2003. Proc., 2003, 155–156.Google Scholar
[39] Okino, T.; Ochiai, M.; Ohno, Y.; Kishimoto, S.; Maezawa, K.; Mizutani, T.: Drain current DLTS of AlGaN-GaN MIS-HEMTs. IEEE Electron Device Lett., 25 (8) (2004), 523–525.Google Scholar
[40] Fang, Z.-Q.; Look, D.C.; Kim, D.H.; Adesida, I.: Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopy. Appl. Phys. Lett., 87 (18) (2005), 182115-1–182115-3.Google Scholar
[41] Verzellesi, G.; Faqir, M.; Chini, A.; Fantini, F.; Meneghesso, G.; Zanoni, E.; Danesin, F.; Zanon, F.; Rampazzo, F.; Marino, F.A.; Cavallini, A.; Castaldini, A.: False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs, in Proc. IEEE 47th IRPS, April 2009, 732–735.CrossRefGoogle Scholar
[42] Tapajna, M.; Simms, R.J.T.; Pei, Y.; Mishra, U.K.; Kuball, M.: Integrated optical and electrical analysis: identifying location and properties of traps in AlGaN/GaN HEMTs during electrical stress. IEEE Electron Device Lett., 31 (7) (2010), 662–664.Google Scholar
[43] DasGupta, S.; Sun, M.; Armstrong, A.; Kaplar, R.J.; Marinella, M.J.; Stanley, J.B.; Atcitty, S.; Palacios, T.: Slow detrapping transients due to gate and drain bias stress in high breakdown voltage AlGaN/GaN HEMTs. IEEE Trans. Electron Devices, 59 (8) (2012), 2115–2122.CrossRefGoogle Scholar
[44] Silvestri, M.; Uren, M.J.; Kuball, M.: Dynamic transconductance dispersion characterization of channel hot-carrier stressed 0.25-µm AlGaN/GaN HEMTs. IEEE Electron Device Lett., 33 (11) (2012), 1550–1552.CrossRefGoogle Scholar
[45] Caesar, M.; Dammann, M.; Polyakov, V.; Waltereit, P.; Bronner, W.; Baeumler, M.; Quay, R.; Mikulla, M.; Ambacher, O.: Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test, in Proc. IEEE IRPS, April 2012, CD.6.1–CD.6.5.Google Scholar
[46] Sasikumar, A.; Arehart, A.; Ringel, S.A.; Kaun, S.; Wong, M.H.; Mishra, U.K.; Speck, J.S.: Direct correlation between specific trap formation and electric stress-induced degradation in MBE grown AlGaN/GaN HEMTs, in Proc. IEEE IRPS, April 2012, 2C.3.1–2C.3.6.Google Scholar
[47] Cardwell, D.W.; Sasikumar, A.; Arehart, A.R.; Kaun, S.W.; Lu, J.; Keller, S.; Speck, J.S.; Mishra, U.K.; Ringel, S.A.; Pelz, J.P.: Spatially-resolved spectroscopic measurements of Ec-0.57 eV traps in AlGaN/GaN high electron mobility transistors. Appl. Phys. Lett., 102 (19) (2013), 193509-1–1935094.Google Scholar
[48] Tanaka, K.; Ishida, M.; Ueda, T.; Tanaka, T.: Effects of deep trapping states at high temperatures on transient performance of AlGaN/GaN Heterostructure field-effect transistors. Jpn. J. Appl. Phys., 52 (S 4) (2013), 04CF07.Google Scholar
[49] Meneghini, M.; Rossetto, I.; Bisi, D.; Stocco, A.; Chini, A.; Pantellini, A.; Lanzieri, C.; Nanni, A.; Meneghesso, G.; Zanoni, E.: Buffer traps in Fe-Doped AlGaN/GaN HEMTs: investigation of the physical properties based on pulsed and transient measurements. IEEE Trans. Electron Devices, 61 (12) (2014), 4070–4077.CrossRefGoogle Scholar
[50] Stocco, A.; Gerardin, S.; Bisi, D.; Dalcanale, S.; Rampazzo, F.; Meneghini, M.; Meneghesso, G.; Grünenpütt, J.; Lambert, B.; Blanck, H.; Zanoni, E.: Proton induced trapping effect on space compatible GaN HEMTs. Microelectron. Reliab., 54 (9–10) (2014), 2213–2216.Google Scholar
[51] Cho, H.K.; Kim, C.S.; Hong, C.-H.: Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n-type GaN. J. Appl. Phys., 94 (3) (2003), 1485.Google Scholar
[52] Bisi, D.; Meneghini, M.; Van Hove, M.; Marcon, D.; Stoffels, S.; Wu, T.-L.; Decoutere, S.; Meneghesso, G.; Zanoni, E.: Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate. Phys. Stat. Sol. (a), 212 (2015), 1122.CrossRefGoogle Scholar