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Lithographical bending control method for a piezoelectric actuator

Published online by Cambridge University Press:  06 March 2009

Tamio Ikehashi ,
Etsuji Ogawa ,
Hiroaki Yamazaki  and
Tatsuya Ohguro
Tamio Ikehashi*
Affiliation:
Toshiba Corporation, Semiconductor Company, Center for Semiconductor R&D Yokohama, Japan.
Etsuji Ogawa
Affiliation:
Toshiba Corporation, Semiconductor Company, Center for Semiconductor R&D Yokohama, Japan.
Hiroaki Yamazaki
Affiliation:
Toshiba Corporation, Semiconductor Company, Center for Semiconductor R&D Yokohama, Japan.
Tatsuya Ohguro
Affiliation:
Toshiba Corporation, Semiconductor Company, Center for Semiconductor R&D Yokohama, Japan.
*
Corresponding author: T. Ikehashi E-mail: tamio.ikehashi@toshiba.co.jp
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Abstract

This paper presents the theoretical formulation of a lithographical bending control (LBC) method that uses lithographical degrees of freedom to control the bending of a multilayered beam. LBC is applied to a piezoelectric actuator that uses PZT as the piezoelectric material. The theoretical model is compared with measurements using a weakly fixed bridge structure suited for curvature measurement.

Keywords

MEMSPiezoelectric actuatorPZTBendingLBC
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Issue 1 , February 2009 , pp. 37 - 42
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

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References

REFERENCES

[1]Lee, H.-C.; Park, J.-H.; Park, Y.-H.: Development of shunt type ohmic RF MEMS switches actuated by piezoelectric cantilever. Sensors Actuators A, 136 (2007), 282–290.CrossRefGoogle Scholar
[2]Kawakubo, T.; Nagano, T.; Nishigaki, M.; Itaya, K.: High reproducibility and reliability of piezoelectric MEMS tunable capacitors for reconfigurable RF front-end. IEDM Dig., (2007), 435–438.Google Scholar
[3]Klaasse, G.; Puers, B.; Tilmans, H.A.C.: Piezoelectric actuation for application in RF-MEMS switches. Proc. SPIE, 5455 (2004), 174–180.CrossRefGoogle Scholar
[4]Ikehashi, T.; Ohguro, T.; Ogawa, E.; Yamazaki, H.; Kojima, K.; Matsuo, M.; Ishimaru, K.; Ishiuchi, H.: A robust RF MEMS variable capacitor with piezoelectric and electrostatic actuation. 2006 IEEE MTT-S Int. Microwave Symp. Dig., (2006), 39–42.CrossRefGoogle Scholar
[5]Ikehashi, T.; Ogawa, E.; Yamazaki, H.; Ohguro, T.: A 3V operation RF-MEMS variable capacitor using piezoelectric and electrostatic actuation with lithographical bending control, 2007 Transducers Dig., (2007), 400–403Google Scholar
[6]Smits, J.G.; Choi, W.-S.: The constituent equations of piezoelectric heterogeneous bimorphs. IEEE Trans. Ultrasonics, Ferroelectrics Freq. Control, 38, (1991), 256–270CrossRefGoogle ScholarPubMed
[7]DeVoe, D.L.; Pisano, A.P.: Modeling and optimal design of piezoelectric cantilevermicroactuators. J. Microelectromech. Sys., 6, (1997), 266–270CrossRefGoogle Scholar
[8]Tilmans, H.A.C.: Micro-mechanical Sensors Using Encapsulated Built-in Resonant Strain Gauges. PhD thesis, University of Twente, 1993.Google Scholar
[9]Weinberg, M.S.: Working equations for piezoelectric actuators and sensors. J. Microelectromech. Sys., 8, (1999), 529–533.CrossRefGoogle Scholar
[10]Senturia, S.D.: Microsystem Design, 4th ed., Kluwer Academic Publishers, Dordrecht, (2002), 216Google Scholar
[11]Kuijk, E.K.: A precision reference voltage source. IEEE J. Solid State Circuit, SC-8, 3, (1973)Google Scholar