Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-28T00:54:13.726Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial growth of BaO and SrO with new crystal structures using mass-separated low-energy O+ beams

Published online by Cambridge University Press:  31 January 2011

Ryusuke Kita ,
Takashi Hase ,
Hiromi Takahashi ,
Kenichi Kawaguchi  and
Tadataka Morishita
Ryusuke Kita
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
Takashi Hase
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
Hiromi Takahashi
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
Kenichi Kawaguchi
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
Tadataka Morishita
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
Get access

Abstract

The growth of BaO and SrO on SrTiO3(100) substrates using mass-separated low-energy (50 eV) O+ beams has been studied using x-ray diffraction, reflection high-energy electron diffraction, and high-resolution transmission electron microscopy. It was found that the BaO and SrO films have been epitaxially grown with new structures different from those of corresponding bulk crystals: The BaO films have a cubic structure with a lattice constant of 4.0 Å, and the SrO films have a tetragonal structure with a lattice constant of a = 3.7 Å parallel to the substrate and with c = 4.0 Å normal to the substrate.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 2 , February 1993 , pp. 321 - 323
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Edwards, J.A.Chew, N.G.Goodyear, S.W.Satchell, J. S.Blenkinsop, S.E., and Humphreys, R. G.J. Less-Common Metals 164 & 165, 414 (1990).CrossRefGoogle Scholar
2Johnson, B. R.Beauchamp, K. M.Wang, T.Liu, J.X.Mc-Greer, K. A., Wan, J.C., Tuominen, M.Zhang, Y.J., Mecartney, M. L. and Guldman, A.M.Appl. Phys. Lett. 56, 1991 (1990).Google Scholar
3Watanabe, S.Kawai, M. and Hanada, T.Jpn. J. Appl. Phys. 29, LIIII (1990).Google Scholar
4Yoshida, I.Kamei, M.Suzuki, K.Morishita, T. and Tanaka, S.Appl. Phys. Lett. 58, 654 (1991).CrossRefGoogle Scholar
5Schlom, D. G.Marshall, A.F.Sizemore, J.T.Chen, Z.J.Eckstein, J.N., Bozovic, I.Dessonneck, K. E. Von, Harris, J. S. Jr. , and Bravman, J. C.J. Cryst. Growth 102, 361 (1990).CrossRefGoogle Scholar
6Kita, R.Hase, T.Itti, R.Sasaki, M.Morishita, T. and Tanaka, S.Appl. Phys. Lett. 60, 2684 (1992).CrossRefGoogle Scholar
7Cullity, B.D.Elements of X-Ray Diffraction (Addison-Wesley, Reading, MA, 1977), 2nd ed., Eqs. (3)–(13).Google Scholar