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Growth by molecular beam epitaxy of (rare-earth group V element)/III-V semiconductor heterostructures

Published online by Cambridge University Press:  03 March 2011

A. Guivarc'h ,
A. Le Corre ,
P. Auvray ,
B. Guenais ,
J. Caulet ,
Y. Ballini ,
R. Gúcrin ,
S. Députier ,
M.C. Le Clanche  and
G. Jézéquel
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A. Guivarc'h*
Affiliation:
FRANCE TELECOM, Centre National d'Etudes des Télécommunications, CNET/LAB, BP 40, F 22301 Lannion, France
A. Le Corre
Affiliation:
FRANCE TELECOM, Centre National d'Etudes des Télécommunications, CNET/LAB, BP 40, F 22301 Lannion, France
P. Auvray
Affiliation:
FRANCE TELECOM, Centre National d'Etudes des Télécommunications, CNET/LAB, BP 40, F 22301 Lannion, France
B. Guenais
Affiliation:
FRANCE TELECOM, Centre National d'Etudes des Télécommunications, CNET/LAB, BP 40, F 22301 Lannion, France
Y. Ballini
Affiliation:
FRANCE TELECOM, Centre National d'Etudes des Télécommunications, CNET/LAB, BP 40, F 22301 Lannion, France
R. Gúcrin
Affiliation:
Laboratoire de Chimie du Solide et Inorganique Moléculaire, UA CNRS 1495, Campus de Beaulieu, F 35042 Rennes, France
S. Députier
Affiliation:
Laboratoire de Chimie du Solide et Inorganique Moléculaire, UA CNRS 1495, Campus de Beaulieu, F 35042 Rennes, France
M.C. Le Clanche
Affiliation:
Laboratoire de Chimie du Solide et Inorganique Moléculaire, UA CNRS 1495, Campus de Beaulieu, F 35042 Rennes, France
G. Jézéquel
Affiliation:
Laboratoire de Spectroscopie du Solide, Bât. 11C, URA CNRS 1202, Campus de Beaulieu, F 35042 Rennes, France
B. Lépine
Affiliation:
Laboratoire de Spectroscopie du Solide, Bât. 11C, URA CNRS 1202, Campus de Beaulieu, F 35042 Rennes, France
A. Quémerais
Affiliation:
Laboratoire de Spectroscopie du Solide, Bât. 11C, URA CNRS 1202, Campus de Beaulieu, F 35042 Rennes, France
D. Sébilleau
Affiliation:
Laboratoire de Spectroscopie du Solide, Bât. 11C, URA CNRS 1202, Campus de Beaulieu, F 35042 Rennes, France
*
a)Permanent address: Laboratoire de Spectroscopie du Solide, Bât. 11C, URA CNRS 1202, Campus de Beaulieu, F 35042 Rennes, France.
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Abstract

This paper deals with the growth by molecular beam epitaxy of semimetallic (rare-earth group V element) compounds on III-V semiconductors. Results are presented, first on the Er-Ga-As and Er-Ga-Sb ternary phase diagrams, second on the lattice-mismatched ErAs/GaAs (δa ≈ +1.6%), YbAs/GaAs (δa/a = +0.8%), and ErSb/GaSb (δa/a ≈ +0.2%) heterostructures, and third on the lattice-matched Sc0.3Er0.7As/GaAs and Sc0.2Yb0.8As/GaAs systems (δa/a < 0.05%). Finally the growth of YbSb2 on GaSb(001) is reported. The studies made in situ by reflection high-energy electron diffraction (RHEED) and x-ray photoelectron diffraction and ex situ by x-ray diffraction, transmission electron microscopy, He+ Rutherford backscattering, and photoelectron spectroscopy are presented. We discuss the atomic registry of the epitaxial layers with respect to the substrates, the appearance of a mosaic effect in lattice-mismatched structures, and the optical and electrical properties of the semimetallic films. The problems encountered for III-V overgrowth on these compounds (lack of wetting and symmetry-related defects) are commented on, and we underline the interest of compounds as YbSb2 which avoid the appearance of inversion defects in the GaSb overlayers.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 8 , August 1995 , pp. 1942 - 1952
Copyright
Copyright © Materials Research Society 1995

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References

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