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Growth defects in diamond films

Published online by Cambridge University Press:  31 January 2011

D. Shechtman ,
J.L. Hutchison ,
L.H. Robins ,
E.N. Farabaugh  and
A. Feldman
D. Shechtman
Affiliation:
Department of Materials Engineering, Technion, Haifa, Israel
J.L. Hutchison
Affiliation:
University of Oxford, Oxford, United Kingdom
L.H. Robins
Affiliation:
National Institute of Standards and Technology,b) Gaithersburg, Maryland 20899
E.N. Farabaugh
Affiliation:
National Institute of Standards and Technology,b) Gaithersburg, Maryland 20899
A. Feldman
Affiliation:
National Institute of Standards and Technology,b) Gaithersburg, Maryland 20899
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Abstract

Growth defects in diamond films grown by plasma-assisted chemical vapor deposition (CVD) were studied by high resolution electron microscopy. Several features of the microstructure were resolved and their importance to the growth of the diamond film was evaluated. The observations included various twin boundaries of the type ∑ = 3, as well as ∑ = 9, ∑ = 27, and ∑ = 81, which form by an interaction of lower order twins. These higher order boundaries are loci of intersection points of growing planes on two adjacent twins and can serve as an indicator for the local crystal growth direction. The central nucleation site for the growing planes in many cases can be traced back to a quintuplet twin point. A twin quintuplet has five re-entrant angles and thus serves as a preferred nucleation site for new planes as the crystal grows.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 3 , March 1993 , pp. 473 - 479
Copyright
Copyright © Materials Research Society 1993

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References

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