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Improving sol-gel Yba2Cu3O7−δ film morphology using high-boiling-point solvents

Published online by Cambridge University Press:  31 January 2011

J. T. Dawley
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
P. G. Clem
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
M. P. Siegal
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
D. R. Tallant
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
D. L. Overmyer
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
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Abstract

The effect of high-boiling-point solvent addition on the morphology of low-p(O2) processed, sol-gel YBa2Cu3O7−δ (YBCO) films is discussed. Proper selection and addition of a high-boiling-point solvent prevents film roughening during precursor pyrolysis, while permitting at least a tenfold reduction in pyrolysis time compared to standard film processing in air or O2. Use of such solvents appears to increase film plasticity, avoiding elastic compressive stress related buckling. High-quality YBCO films on 〈100〉 LaAlO3 with a critical current density (Jc) ∼ 3–4 MA/cm2 at 77 K, are routinely crystallized with this new sol-gel process. Diethanolamine-based, sol-gel YBCO films deposited on sol-gel SrTiO3-buffered 〈100〉 Ni have Jc(77 K) > 1 MA/cm2, demonstrating a route toward all-sol-gel superconducting wires.

Type
Rapid Communications
Copyright
Copyright © Materials Research Society 2002

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References

1.Sheth, A., Schmidt, H., and Lasrado, V., Appl. Supercond. 6, 855 (1998).CrossRefGoogle Scholar
2.McIntyre, P.C., Cima, M.J., Smith, J.A. Jr., Hallock, R.B., Siegal, M.P., and Phillips, J.M., J. Appl. Phys. 71, 1868 (1992).CrossRefGoogle Scholar
3.Mankiewich, P.M., Scofield, J.H., Skocpol, W.J., Howard, R.E., Dayem, A.H., and Good, E., Appl. Phys. Lett. 51, 1753 (1987).CrossRefGoogle Scholar
4.Siegal, M.P., Phillips, J.M., Dover, R.B. van, Tiefel, T.H., and Marshall, J.H., J. Appl. Phys. 68, 6353 (1990).CrossRefGoogle Scholar
5.Dawley, J.T., Clem, P.G., Siegal, M.P., and Overmyer, D.L., J. Mater. Res. 16, 13 (2001).CrossRefGoogle Scholar
6.Dawley, J.T., Clem, P.G., Siegal, M.P., Overmyer, D.L., and Rodriguez, M.A., IEEE Trans. Appl. Supercond. 11, 2873 (2001).CrossRefGoogle Scholar
7.Siegal, M.P., Hou, S.Y., Phillips, J.M., Tiefel, T.H., and Marshall, J.H., J. Mater. Res. 7, 2658 (1992).CrossRefGoogle Scholar
8.Siegal, M.P., Dawley, J.T., and Overmyer, D.L., J. Mater. Res. 16,(2001).CrossRefGoogle Scholar
9.Gibson, G., Cohen, L.F., Humphreys, R.G., and MacManus-Driscoll, J.L., Physica C 333, 139 (2000).CrossRefGoogle Scholar
10.Bowden, N., Huck, W.T.S., Paul, K.E., and Whitesides, G.M., Appl. Phys. Lett. 75, 2557 (1999).CrossRefGoogle Scholar
11.Kozuka, H. and Kajimura, M., Chem. Lett. 10, 1029 (1999).CrossRefGoogle Scholar
12.Schwartz, R.W., Reichert, T.L., Clem, P.G., Dimos, D., and Liu, D., Integr. Ferroelectr. 18, 275 (1997).CrossRefGoogle Scholar
13.Arscott, S., Miles, R.E., Kennedy, J.D., and Milne, S.J., J. Mater. Res. 14, 494 (1999).CrossRefGoogle Scholar
14.Liu, D. and Mevissen, J.P., Integr. Ferroelectr. 18, 263 (1997).CrossRefGoogle Scholar
15.McIntyre, P.C., Cima, M.J., and Roshko, A., J. Appl. Phys. 77, 5263 (1995).CrossRefGoogle Scholar
16.McIntyre, P.C., Cima, M.J., and Roshko, A., J. Cryst. Growth 149, 64 (1995).CrossRefGoogle Scholar
17.Solovyov, V.F., Wiesmann, H.J., Wu, L.J., Suenaga, M., and Feenstra, R., IEEE Trans. Appl. Supercond. 9, 1467 (1999).CrossRefGoogle Scholar
18.Roshko, A., Stork, F.J.B., Rudman, D.A., Aldrich, D.J., and Hotsenpiller, P.A.M., J. Cryst. Growth 174, 398 (1997).CrossRefGoogle Scholar
19.Siegal, M.P., Clem, P.G., Dawley, J.T., Ong, R.J., Rodriguez, M.A., and Overmyer, D.L., Appl. Phys. Lett. 80, 2710 (2002).CrossRefGoogle Scholar
20.Dawley, J.T., Ong, R.J., and Clem, P.G., J. Mater. Res. 17 (2002).Google Scholar