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In situ single-liquid-source metal-organic chemical vapor deposition of (La0.8Ca0.2)MnO3 giant magnetoresistive films

Published online by Cambridge University Press:  03 March 2011

Y.Q. Li ,
J. Zhang ,
S. Pombrik ,
S. DiMascio ,
W. Stevens ,
Y.F. Yan  and
N.P. Ong
Y.Q. Li*
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, Connecticut 06810
J. Zhang
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, Connecticut 06810
S. Pombrik
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, Connecticut 06810
S. DiMascio
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, Connecticut 06810
W. Stevens
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, Connecticut 06810
Y.F. Yan
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, Connecticut 06810
N.P. Ong
Affiliation:
Department of Physics, Princeton University, Princeton, New Jersey 08544
*
a)Present address: NZ Applied Technology, 150C New Boston Street, Woburn, Massachusetts 01801.
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Abstract

A large magnetoresistance change (ΔR/RH) of −550% has been observed at 270 K in (La0.8Ca0.2)MnO3 thin films. The films were prepared in situ on LaAlO3 substrates by single-liquid-source metal-organic chemical vapor deposition. M(thd)n (M = La, Ca, and Mn, and n = 2, 3) were dissolved together in an organic solution and used as precursors for the deposition of (La0.8Ca0.2)MnO3 thin films. Deposition was conducted at an oxygen partial pressure of 1.2 Torr and a substrate temperature ranging from 600 °C to 700 °C. The mechanism for the large magnetoresistance change in this manganese oxide is briefly discussed.

Type
Rapid Communication
Information
Journal of Materials Research , Volume 10 , Issue 9 , September 1995 , pp. 2166 - 2169
Copyright
Copyright © Materials Research Society 1995

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References

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