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Investigation of the Crystallization Mechanisms in Indium Molybdenum Oxide Films by Vacuum Annealing

Published online by Cambridge University Press:  01 August 2005

Shi-Yao Sun ,
Jow-Lay Huang  and
Ding-Fwu Lii
Shi-Yao Sun
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University, Tainan 701, Taiwan, Republic of China
Jow-Lay Huang*
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University, Tainan 701, Taiwan, Republic of China
Ding-Fwu Lii
Affiliation:
Department of Electrical Engineering, Cheng Shiu University, Kaohsiung County 833, Taiwan, Republic of China
*
a) Address all correspondence to this author. e-mail: JLH888@mail.ncku.edu.tw
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Abstract

The crystallization mechanisms for potentially high mobility molybdenum-indium-oxide (IMO) film were studied. The crystalline IMO films were deposited on unheated glass substrates via high-density plasma evaporation, and subsequent vacuum annealing was performed at 150, 200, and 250 °C for 30 min. The results of x-ray diffraction and x-ray photoelectron spectroscopy and electrical properties suggested that the room-temperature crystallization was induced from the highest compressive strain, caused by the charged clusters and oxygen vacancies. The highest mobility of 75.8 cm2/Vs obtained at 250 °C was due to the charged In–Mo+6–O clusters and strain relaxation with (222)/(440) orientation change.

Keywords

AnnealingPhysical vapor deposition (PVD)
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 8 , August 2005 , pp. 2030 - 2037
Copyright
Copyright © Materials Research Society 2005

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References

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