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Microstructural characterization of ordered nickel silicide structures grown on (111) nickel silicide films

Published online by Cambridge University Press:  31 January 2011

Herbert L. Ho
Affiliation:
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
Charles L. Bauer
Affiliation:
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
Subhash Mahajan
Affiliation:
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
David E. Laughlin
Affiliation:
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
Arthur G. Milnes
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
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Abstract

The formation processes of epitaxial nickel silicides, resulting from the interaction of nickel silicide films (10 nm–100 nm) on (111) silicon (Si) substrates after furnace annealing, have been studied using transmission electron microscopy (TEM) and x-ray diffraction (XRD) techniques. The formation of type-A epitaxial grains (i.e., grown with the same orientation of the underlying Si substrate) and type-B epitaxial grains (i.e., rotated by 180± around the surface normal) in “thick” epitaxial films (i.e., greater than 35 nm) is proposed to be linked to the formation of a fluorite-based CuPt (L11)-like NiSi phase. This phase is found to be a metastable phase and is believed to be a transitional phase toward the formation of the equilibrium NiSi2 phase in both type-A and type-B orientations. In addition, we have found that a fluorite-based CuPt-like NiSi may even coexist with a fluorite-based CuAu I-like structure. The interrelationship between these two structures is discussed in the context of a displacive transformation process in fcc structures as originally proposed by Hansson and Barnes [Acta Metall. 12, 315 (1964)] and Pashley et al. [Philos. Mag. 19, 83 (1969)].

Type
Articles
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1.Bennett, P. A., Halawirth, B. N., and Johnson, A. P., J. Vac. Sci. Technol. A 5, 2121 (1987).CrossRefGoogle Scholar
2.Gibson, J. M., Batsone, J.L., Tung, R.T., and Unterwald, F.C., Phys. Rev. Lett. 60, 1158 (1988).CrossRefGoogle Scholar
3.Ho, H. L., Mahajan, S., Bauer, C. L., and Laughlin, D. E., Mater. Sci. Eng. B 10, 107 (1991).CrossRefGoogle Scholar
4.Silicides for VLSI Applications, edited by Murarka, S. P. (Academic Press, New York, 1983).Google Scholar
5.Nicolet, M.A. and Lau, S.S., in VLSI Electronics: Microstructure Science (Academic Press, New York, 1982).Google Scholar
6.Paris, H. G. and Lefevre, B. G., Mater. Res. Bull. XII, 1109 (1972).CrossRefGoogle Scholar
7.Pashley, D. W., Robertson, J. L., and Stowell, M. J., Philos. Mag. 19, 83 (1969).CrossRefGoogle Scholar
8. DiffpatTM, EGA Version 1.8 by J.T. Staley, Copyright 1988.Google Scholar
9.Baeri, P., Grimaldi, M.G., Priolo, F., Cullis, A.G., and Chew, N.G., J. Appl. Phys. 66, 861 (1989).CrossRefGoogle Scholar
10.Hansson, B. and Barnes, R.S., Acta Metall. 12, 315 (1964).CrossRefGoogle Scholar
11.The Crystal Chemistry and Physics of Metals and Alloys, edited by Pearson, W.B. (John Wiley, New York, 1972).Google Scholar