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Preparation of ZnO by a nearby vaporizing chemical vapor deposition method

Published online by Cambridge University Press:  31 January 2011

Junichi Nishino  and
Yoshio Nosaka
Junichi Nishino
Affiliation:
Nagaoka University of Technology, Department of Chemistry, 1603–1 Kamitomioka-machi, Nagaoka-shi, Niigata 940–2188, Japan
Yoshio Nosaka
Affiliation:
Nagaoka University of Technology, Department of Chemistry, 1603–1 Kamitomioka-machi, Nagaoka-shi, Niigata 940–2188, Japan
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Abstract

Zinc oxide (ZnO) films were prepared by a nearby vaporizing chemical vapor deposition method using bis(2,4-pentanedionato)zinc as a source material. The deposition rate increased exponentially from 0.58 to 147 nm min−1 with increasing substrate temperature (Ts). The highest preferred orientation to the c axis was obtained under the conditions that the distance between substrate and source surface was 5.0 mm, and the Ts was 300 °C. When we used a sapphire (0001) substrate, an epitaxial ZnO film could be deposited on this condition.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 18 , Issue 9 , September 2003 , pp. 2029 - 2032
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1.Kawasaki, M., Ohtomo, A., Ohkubo, I., Koinuma, H., Tang, Z.K., Yu, P., Wong, G.K.L., Zhang, B.P., and Segawa, Y., Mater. Sci. Eng. B 56, 239 (1998).Google Scholar
2.Souletie, P. and Wessels, B.W., J. Mater. Res. 3, 740 (1988).Google Scholar
3.Roth, A.P. and Williams, D.F., J. Appl. Phys. 52, 6685 (1981).Google Scholar
4. A.P.Roth and Williams, D.F., J. Electrochem. Soc. 128, 2684 (1981).Google Scholar
5.Wenas, W.W., Yamada, A., Konagai, M., and Takahashi, K., Jpn. J. Appl. Phys. 30(3B), L441 (1991).Google Scholar
6.Fu, Zhuxi, Lin, Bixia, and Zu, Jie, Thin Solid Films 402, 302 (2002).Google Scholar
7.Kamata, K., Nishino, J., Ohshio, S., Maruyama, K., and Ohtuki, M., J. Am. Ceram. Soc. 77, 505 (1994).Google Scholar
8.Rudolph, G. and Henry, M.C., Inorg. Synth. X, 74 (1967).Google Scholar