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Synthesis of InN nanowires grown on droplets formed with Au and self-catalyst on Si(111) by using metalorganic chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Seok-Hyo Yun ,
Suthan Kissinger ,
Don Wook Kim ,
Jun-Ho Cha ,
Yong-Ho Ra  and
Cheul-Ro Lee
Cheul-Ro Lee*
Affiliation:
School of Advanced Materials Engineering, Engineering College, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Deokjin-Dong 664-14, Chonju, Chonbuk, Korea
*
a)Address all correspondence to this author. e-mail: crlee7@chonbuk.ac.kr
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Abstract

We demonstrated the growth of indium nitride (InN) nanowires on Si(111) substrates by metalorganic chemical vapor deposition without the use of any intermediate GaN or AlN buffer layer. The InN nanowires were grown by forming the Au + In droplets and In droplets on the Au- and In-coated Si substrate. The growth conditions such as chamber pressure, chamber temperature, reaction gas flow rate, and carrier gas flow rate were optimized to yield nanowires free from contamination. Depending on the growth parameters different growth regimes for the InN nanowires were identified. The strength of self-catalytic route has been highlighted. The morphology and microstructures of samples were characterized by x-ray diffraction and scanning electron microscopy (SEM). The transmission electron microscopy and SEM investigations showed that the InN nanowires are single crystals with diameters ranging from 40 to 400 nm, and lengths up to 3 µm. Photoluminescence spectra of the InN nanowires showed a strong broad emission peak at 0.77 eV.

Keywords

Metalorganic DepositionNanostructureOptoelectronic
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 9 , September 2010 , pp. 1778 - 1783
Copyright
Copyright © Materials Research Society 2010

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