Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-28T16:24:02.906Z Has data issue: false hasContentIssue false

Adhesion of Chemical Vapor Deposited Boron Carbo-nitride to Dielectric and Copper Films

Published online by Cambridge University Press:  01 August 2005

E.R. Engbrecht
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712
P.R. Fitzpatrick
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712
K.H. Junker
Affiliation:
Freescale Semiconductor, Austin, Texas 78721
Y-M. Sun
Affiliation:
Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712
J.M. White
Affiliation:
Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712
J.G. Ekerdt*
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712
*
b) Address all correspondence to this author. e-mail: ekerdt@che.utexas.edu
Get access

Abstract

The interfacial adhesion energy was studied using the four-point bend method for boron carbo-nitride (BCxNy) deposited on dielectric and copper films. Twenty-five nanometer BCxNy films were deposited by chemical vapor deposition at 360 °C and 1 Torr using dimethylamine borane with no coreactant, NH3, or C2H4, producing different composition films, BC0.37N0.15, BC0.11N0.49, BC0.92N0.07, with dielectric constants of 4.1, 4.2, and 3.8, respectively. BCxNy films were deposited on dense and porous dielectrics, and copper. BCxNy films adhered strongly to the dielectric films and the composite beams snapped before debonding, revealing that the critical debond energy Gc exceeded 10 J/m2. The adhesion of BCxNy to oxidized copper increased with carbon content in the film, with the BC0.92N0.07 film beams snapping, and is possibly related to covalent bonding between surface oxygen and carbon in the film.

Type
Articles
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1International Technology Roadmap for Semiconductors, 2002 Update (SIA, San Jose, CA, 2003), http://public.itrs.net.Google Scholar
2Engbrecht, E.R., Sun, Y-M., Junker, K.H., White, J.M. and Ekerdt, J.G.: Chemical vapor deposition boron carbo-nitride deposited using dimethylamine borane with ammonia and ethylene. J. Vac. Sci. Technol. A 22, 2152 (2004).CrossRefGoogle Scholar
3Martin, J., Filipiak, S., Stephens, T., Huang, F., Aminpur, M., Mueller, J., Demircan, E., Zhao, L., Werking, J., Goldberg, C., Park, S., Sparks, T., and Esber, C.: Integration of SiCN as a low k etch stop and Cu passivation in a high performance Cu/low k interconnect, in Proceedings of the IEEE 2002 International Interconnect Technology Conference, Vol. 42 (IEEE, Piscataway, NJ, 2002).Google Scholar
4Lee, S.G., Kim, Y.J., Lee, S.P., Oh, H-S., Lee, S.J., Kim, M., Kim, I-G., Kim, J-H., Shin, H-J., Hong, J-G., Lee, H-D. and Kang, H-K.: Low dielectric constant 3MS α–SiC:H as Cu diffusion barrier layer in Cu dual damascene process. Jpn. J. Appl. Phys. 40, 2663 (2001).CrossRefGoogle Scholar
5Goto, K., Yuasa, H., And, A.atsu, and Matsuura, M.: Film characterization of Cu diffusion barrier dielectrics for 90 nm and 65 nm technology node Cu interconnects, in Proceedings of the IEEE 2003 International Interconnect Technology Conference, Vol. 6 (IEEE, Piscataway, NJ, 2003), p. 6.Google Scholar
6Chen, C.W., Chang, T.C., Liu, P.T., Tsai, T.M., Huang, H.C., Chen, J.M., Tseng, C.H., Liu, C.C. and Tseng, T.Y.: Investigation of the electrical properties and reliability of amorphous SiCN. Thin Solid Films 447, 632 (2004).CrossRefGoogle Scholar
7Sun, J.N., Gidley, D.W., Hu, Y., Frieze, W.E. and Ryan, E.T.: Depth-profiling plasma-induced densification of porous low-k thin films using positronium annihilation lifetime spectroscopy. Appl. Phys. Lett. 81, 1447 (2002).CrossRefGoogle Scholar
8Lane, M.W., Liniger, E.G. and Lloyd, J.R.: Relationship between interfacial adhesion and electromigration in Cu metallization. J. Appl. Phys. 93, 1417 (2003).CrossRefGoogle Scholar
9Berg, J.C. Semi-empirical strategies for predicting adhesion, in Surfaces, Chemistry and Applications, edited by Chaudhury, M. and Pocius, A.V. (Elsevier, The Netherlands, 2002), pp. 175.Google Scholar
10Tsui, T., Goldberg, C., Braeckelman, G., Filipiak, S., Ekstrom, B., Lee, J., Jackson, E., Herrick, M., Iacoponi, J., Martin, J., and Sieloff, D.: The use of the four-point bending technique for determining the strength of low k dielectric/barrier interface, in Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics, edited by Oehrlein, G.S., Maex, K., Joo, Y-C., Ogawa, S., and Wetzel, J.T. (Mater. Res. Soc. Symp. Proc. 612, Warrendale, PA, 2001), pp. D1.2.1-5.Google Scholar
11Ma, Q., Bumgarner, J., Fujimoto, H., Lane, M., and Dauskardt, R.: Adhesion measurement of interfaces in multilayer interconnect structures, in Materials Reliability in Microelectronics VII, edited by Clement, J.J., Keller, R.R., Krisch, K.S., Sanchez, J.E., Jr., and Z. Suo (Mater. Res. Soc. Symp. Proc. 473, Pittsburgh, PA, 1997), p. 3.Google Scholar
12Scherban, T., Sun, B., Blaine, J., Block, C., Jin, B., and Andideh, E.: Interfacial adhesion of copper-low k interconnects, in Proceedings of the IEEE 2001 Interconnect Technology Conference, (IEEE, Piscataway, NJ, 2002), pp. 257259.Google Scholar
13Lee, J.A., Wetzel, J.T., Merrill, C., and Ho, P.S.: Interfacial adhesion study of porous low-k dielectrics to CVD barrier layers, in Silicon Materials—Processing, Characterization and Reliability, edited by Veteran, J.L., O’Meara, D.L., Mistra, V., and Ho, P.S. (Mater. Res. Soc. Symp. Proc. 716, Warrendale, PA, 2002), B12.12.1, p. 613.Google Scholar
14Engbrecht, E.R., Smith, S., and Pfeifer, K.: Influence of sample preparation on interfacial adhesion energy using the four-point bend technique, in 2002 Advanced Metallization Conference, 247 (2002).Google Scholar
15Lane, M. and Rosenberg, R.: Interfacial relationships in microelectronic devices, in Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics Conference, edited by McKerrow, A.J., Leu, J., Kraft, O., and Kikkawa, T. (Mater. Res. Soc., Warrendale, PA, 766, 2003), pp. E9.1/153.Google Scholar
16Charalambides, P.G., Lund, J., Evans, A.G. and McMeeking, R.M.: A test specimen for determining the fracture resistance of biomaterial interfaces. J. Appl. Mech. 56, 77 (1989).CrossRefGoogle Scholar
17Maîtrejean, S., Fusalba, F., Patz, M., Jousseaume, V., and Mourier, T.: Adhesion studies of thin films on ultra low k, in Proceedings of the IEEE 2002 Interconnect Technology Conference, (IEEE, Piscataway, NJ, 2002), p. 206.Google Scholar
18Ma, Q., Fujimoto, H., Flinn, P., Jain, V., Adibi-Rizi, F., Moghadam, F., and Dauskardt, R.H.: Quantitative measurement of interface fracture energy in multi-layer thin film structures, in Materials Reliability in Microelectronics V, edited by Oates, A.S., Filter, W.F., Rosenberg, R., Greer, A.L., and Gadepally, K. (Mater. Res. Soc. Symp. 391, Pittsburgh, PA, 1995), p. 91.Google Scholar
19Singer, P.: Copper challenges for the 45 nm node. Semicond. Int. 27, 40 (2004).Google Scholar
20Zumdahl, S.S.: Chemistry (D.C. Heath and Company, Lexington, KY, 1989), p. 345.Google Scholar
21Properties of Crystalline Silicon, edited by Hull, R. (INSPEC, London, U.K., 1999), p. 102.Google Scholar
22Handbook of Semiconductor Silicon Technology, edited by O’Mara, W.C., Herring, R.B., and Hunt, L.P. (Noyes Publications, Park Ridge, NJ, 1990), p. 424.Google Scholar