Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-10T11:23:28.622Z Has data issue: false hasContentIssue false
  • English
  • Français

Anodization Behavior of Al Film on Si Substrate With Different Interlayers for Preparing Si-Based Nanoporous Alumina Template

Published online by Cambridge University Press:  03 March 2011

M.T. Wu ,
I.C. Leu  and
M.H. Hon
M.T. Wu
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, 701 Tainan, Taiwan
I.C. Leu*
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, 701 Tainan, Taiwan
M.H. Hon
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, 701 Tainan, Taiwan
*
a)Address all correspondence to this author. e-mail: icleu@mail.mse.ncku.edu.tw
Get access

Abstract

The fabrication and applications of porous anodic alumina (PAA) have been studied for decades. Recently, preparation of PAA template directly formed on Si has been developed to enhance the performance of the fabricated nanostructures. However, less attention is paid to the anodization mechanism of the Al film on the Si substrate. In the current study, the PAA template was fabricated on Si of which an interlayer was sandwiched between the Al film and the Si substrate. The anodization behavior of the Al film, especially at the alumina–substrate interface, was investigated through the observation of the variation of oxidation current and the structural change of alumina. Different degree of dissolution at the pore base of alumina was revealed when a different interlayer was introduced, leading to the formation of the arched pore bottom. At the same time, difference in the variation of current was also observed as the pore base reached the alumina–Si interface. These features were different from those observed in conventional anodization of Al foils. The findings in this study are of scientific and technological importance for the template-mediated growth of nanostructures, especially for those to be integrated into Si devices.

Keywords

Electrochemical synthesisNanoscaleTemplate
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 3 , March 2004 , pp. 888 - 895
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Khizroev, S., Bain, J.A. and Litvinov, D., Nanotechnology 13 619 (2002).CrossRefGoogle Scholar
2Varghese, O.K., Gong, D., Paulose, M., Ong, K.G., Grimes, C.A. and Dickey, E.C., J. Mater. Res. 17 1162 (2002).CrossRefGoogle Scholar
3Rosenman, G., Urenski, P., Agronin, A., Rosenwaks, Y. and Molotskii, M., Appl. Phys. Lett. 82 103 (2003).CrossRefGoogle Scholar
4Keller, F., Hunter, M.S. and Robinson, D.L., J. Electrochem. Soc. 100 411 (1953).CrossRefGoogle Scholar
5O’Sullivan, J.P. and Wood, G.C., Proc. R. Soc. (London) A 317 511 (1970).Google Scholar
6Li, A.P., Müller, F., Birner, A., Nielsch, K. and Gösele, U., J. Appl. Phys. 84 6023 (1998).CrossRefGoogle Scholar
7Almawlawi, D., Bosnick, K.A., Osika, A. and Moskovits, M., Adv. Mater. 12 1252 (2000).3.0.CO;2-0>CrossRefGoogle Scholar
8Paulus, P.M., Luis, F., Kröll, M., Schmid, G. and Jongh, L.J., J. Magn. Magn. Mater. 224 180 (2001).CrossRefGoogle Scholar
9Yang, Y., Chen, H., Mei, Y., Chen, J., Wu, X. and Bao, X., Acta Materia. 50 5085 (2002).CrossRefGoogle Scholar
10Wang, Y.C., Leu, I.C. and Hon, M.H., J. Mater. Chem. 12 2439 (2002).CrossRefGoogle Scholar
11Crouse, D., Lo, Y.H., Miller, A.E. and Crouse, M., Appl. Phys. Lett. 76 49 (2000).CrossRefGoogle Scholar
12Vorobyova, A.I., Sokol, V.A. and Outkina, E.A., Appl. Phys. A 67 487 (1998).CrossRefGoogle Scholar
13Chu, S.Z., Wada, K., Inoue, S., Todoroki, S., Takahashi, Y.K. and Hono, K., Chem. Mater. 14 4595 (2002).CrossRefGoogle Scholar
14Sander, M.S. and Tan, L-S., Adv. Funct. Mater. 13 393 (2003).CrossRefGoogle Scholar
15Rabin, O., Herz, P.R., Lin, Y-M., Akinwande, A.I., Cronin, S.B. and Dresselhaus, M.S., Adv. Funct. Mater. 13 631 (2003).CrossRefGoogle Scholar
16Chu, S.Z., Wada, K., Inoue, S. and Todoroki, S., J. Electrochem. Soc. 149 B321 (2002).CrossRefGoogle Scholar
17Mozalev, A., Poznyak, A., Mozaleva, I. and Hassel, A.W., Electrochem. Comm. 3 299 (2001).CrossRefGoogle Scholar
18Yang, Y., Chen, H., Mei, Y., Chen, J., Wu, X. and Bao, X., Solid State Commun. 123 279 (2002).CrossRefGoogle Scholar
19Thompson, G.E., Xu, Y., Skeldon, P., Shimizu, K., Han, S.H. and Wood, G.C., Philos. Mag. A 55 651 (1987).CrossRefGoogle Scholar
20Patermarakis, G. and Moussoutzanis, K., Electrochim. Acta 40 699 (1995).CrossRefGoogle Scholar
21Li, F., Zhang, L. and Metzger, R.M., Chem. Mater. 10 2470 (1998).CrossRefGoogle Scholar
22Shimizu, K., Kobayashi, K., Skeldon, P., Thompson, G.E. and Wood, G.C., Corros. Sci. 3 701 (1997).CrossRefGoogle Scholar
23Zhang, X.G.Electrochemistry of Silicon and Its Oxide (Kluwer Academic/Plenum Publishers, New York, 2001), p. 48.Google Scholar
24Lehmann, V.Electrochemistry of Silicon (Wiley-VCH Verlag GmbH, Morlenbach, Germany, 2002), p. 79.CrossRefGoogle Scholar
25Blackwood, D.J., Peter, L.M. and Williams, D.E., Electrochim. Acta 33 1143 (1988).CrossRefGoogle Scholar
26De Pauli, G.P., Giordano, M.C. and Zerbino, J.O., Electrochim. Acta 28 1781 (1983).CrossRefGoogle Scholar
27Pourbaix, M.Atlas of Electrochemical Equilibria in Aqueous Solutions (NACE, Houston, 1974).Google Scholar
28Lehmann, V., J. Electrochem. Soc. 143 1313 (1996).CrossRefGoogle Scholar
29Parkhutik, V.P. and Shershulsky, V.I., Phys. D: Appl. Phys. 25 1258 (1992).CrossRefGoogle Scholar