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Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy

Published online by Cambridge University Press:  31 January 2011

H. Zhou ,
A. Rühm ,
N. Y. Jin-Phillipp ,
F. Phillipp ,
M. Gross  and
H. Schröder
H. Zhou*
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstr, 1, 70569 Stuttgart, Germany
A. Rühm
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstr, 1, 70569 Stuttgart, Germany
N. Y. Jin-Phillipp
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstr, 1, 70569 Stuttgart, Germany
F. Phillipp
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstr, 1, 70569 Stuttgart, Germany
M. Gross
Affiliation:
Institut für Technische Physik, Pfaffenwaldring 38–40, 70569 Stuttgart, Germany
H. Schröder
Affiliation:
Institut für Technische Physik, Pfaffenwaldring 38–40, 70569 Stuttgart, Germany
*
a)On leave of absence from Institute of Solid State Physics, Academia Sinica, Hefei 230031, People's Republic of China. e-mail: hzhou@wselix.mpi-stuttgart.mpg.de
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Abstract

GaN grown on sapphire (α–Al2O3) was characterized by laser-induced molecular beam epitaxy. Threading dislocations with Burgers vectors of 1/3〈1120〉, 1/3〈1123〉 and [0001] were observed with a predominance of the first type. Additionally, inversion domains with Ga-polarity existed with respect to the adjacent matrix, which was of N-polarity. The dislocation densities and coherence lengths were deduced from x-ray diffraction and found to be in accordance with those measured by transmission electron microscopy. Both displacement fringe contrast analysis and high-resolution transmission electron microscopy results indicated that the inversion domain boundaries had Ga–N bonds between domains and the adjacent matrix.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 1 , January 2001 , pp. 261 - 267
Copyright
Copyright © Materials Research Society 2001

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References

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