Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Bhushan, Bharat
Gupta, B.K.
and
Azarian, Michael H.
1995.
Nanoindentation, microscratch, friction and wear studies of coatings for contact recording applications.
Wear,
Vol. 181-183,
Issue. ,
p.
743.
Scharf, T. W.
Inturi, R. B.
and
Barnard, J. A.
1996.
Characterization of the Mechanical and Tribological Properties of Sputtered a:SiC Thin Films.
MRS Proceedings,
Vol. 436,
Issue. ,
El Khakani, M. A.
Chaker, M.
O’Hern, M. E.
and
Oliver, W. C.
1997.
Linear dependence of both the hardness and the elastic modulus of pulsed laser deposited a-SiC films upon their Si–C bond density.
Journal of Applied Physics,
Vol. 82,
Issue. 9,
p.
4310.
Xu, Ying-Yu
Muramatsu, Takahiro
Aoki, Toru
Nakanishi, Yoichiro
and
Hatanaka, Yoshinori
1998.
Preparation of SiC Thin Film Using Organosilicon by Remote Plasma CVD Method.
MRS Proceedings,
Vol. 544,
Issue. ,
Redondas, X.
González, P.
León, B.
and
Pérez-Amor, M.
1998.
Dependence on the C2H4 and SiH4 gas mixture of the Si-C film properties obtained by excimer lamp chemical vapour deposition.
Surface and Coatings Technology,
Vol. 100-101,
Issue. ,
p.
160.
Scordo, S.
Ducarroir, M.
Bêche, E.
and
Berjoan, R.
1998.
On the nature of microwave deposited hard silicon-carbon films.
Journal of Materials Research,
Vol. 13,
Issue. 11,
p.
3315.
Wróbel, Aleksander M.
and
Walkiewicz-Pietrzykowska, Agnieszka
1998.
Mechanism of the Initiation Step in Atomic Hydrogen-Induced CVD of Amorphous Hydrogenated Silicon–Carbon Films from Single-Source Precursors.
Chemical Vapor Deposition,
Vol. 4,
Issue. 4,
p.
133.
Xu, Y.-Y
Muramatsu, T
Taniyama, M
Aoki, T
and
Hatanaka, Y
2000.
Deposition of a-SiC:H thin film from organosilicon material by remote plasma CVD method.
Thin Solid Films,
Vol. 368,
Issue. 2,
p.
181.
Tabbal, M.
Isber, S.
Christidis, T. C.
El Khakani, M. A.
and
Chaker, M.
2000.
Effect of deposition temperature on the optical transmission and paramagnetic centers in pulsed laser deposited amorphous silicon carbide thin films.
Journal of Applied Physics,
Vol. 88,
Issue. 9,
p.
5127.
Yang, D.
Xue, L.
Mccague, C. M.
Norton, P. R.
and
Zhang, C. S.
2002.
Large-Area Pulsed Laser Deposition of Silicon Carbide Films.
MRS Proceedings,
Vol. 715,
Issue. ,
Matsutani, Takaomi
Asanuma, Tatsuya
Liu, Chang
Kiuchi, Masato
and
Takeuchi, Takae
2003.
Ion beam-induced chemical vapor deposition with hexamethyldisilane for hydrogenated amorphous silicon carbide and silicon carbonitride films.
Surface and Coatings Technology,
Vol. 169-170,
Issue. ,
p.
624.
Wróbel, A. M.
Walkiewicz-Pietrzykowska, A.
Bieliński, D. M.
Klemberg-Sapieha, J. E.
Nakanishi, Y.
Aoki, T.
and
Hatanaka, Y.
2003.
Remote Hydrogen Plasma Chemical Vapor Deposition from (Dimethylsilyl)(trimethylsilyl)methane. 2. Property−Structure Relationships for Resulting Silicon−Carbon Films.
Chemistry of Materials,
Vol. 15,
Issue. 8,
p.
1757.
Jacobsohn, L. G.
Afanasyev-Charkin, I. V.
Cooke, D. W.
Schulze, R. K.
Averitt, R. D.
and
Nastasi, M.
2004.
Incorporation of fluorine in hydrogenated silicon carbide films deposited by pulsed glow discharge.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films,
Vol. 22,
Issue. 4,
p.
1223.
Ivashchenko, V.I.
Dub, S.N.
Porada, O.K.
Ivashchenko, L.A.
Skrynskyy, P.L.
and
Stegniy, A.I.
2006.
Mechanical properties of PECVD a-SiC:H thin films prepared from methyltrichlorosilane.
Surface and Coatings Technology,
Vol. 200,
Issue. 22-23,
p.
6533.
Ivashchenko, V. I.
Turchi, P. E. A.
and
Shevchenko, V. I.
2007.
Simulations of the mechanical properties of crystalline, nanocrystalline, and amorphous SiC and Si.
Physical Review B,
Vol. 75,
Issue. 8,
Zorman, Christian A.
and
Parro, Rocco J.
2008.
Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS.
physica status solidi (b),
Vol. 245,
Issue. 7,
p.
1404.
Zorman, Christian A.
and
Parro, Rocco J.
2009.
Silicon Carbide.
p.
411.
Walkiewicz‐Pietrzykowska, Agnieszka
Wrobel, Aleksander M.
and
Glebocki, Bartosz
2009.
Properties of Amorphous Hydrogenated Silicon Carbide (a‐SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 2.
Chemical Vapor Deposition,
Vol. 15,
Issue. 1-3,
p.
47.
Hana, Nurul
Tsutsui, Hidenori
Matsutani, Takaomi
and
Hosokawa, Yoshinori
2012.
Development of compact ion gun under atmospheric pressure X-rays.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms,
Vol. 272,
Issue. ,
p.
342.
Wrobel, A.M.
Walkiewicz-Pietrzykowska, A.
and
Uznanski, P.
2014.
Remote hydrogen microwave plasma chemical vapor deposition from methylsilane precursors. 2. Surface morphology and properties of deposited a-SiC:H films.
Thin Solid Films,
Vol. 564,
Issue. ,
p.
232.