Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-30T22:20:39.948Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparison of C2F6 and FASi-4 as fluorine dopant sources in plasma enhanced chemical vapor deposited fluorinated silica glass films

Published online by Cambridge University Press:  31 January 2011

Woo Sik Yoo ,
Richard Swope ,
Barbara Sparks  and
David Mordo
Woo Sik Yoo
Affiliation:
Novellus Systems, Inc., 3970 North First Street, San Jose, California 95134
Richard Swope*
Affiliation:
Novellus Systems, Inc., 3970 North First Street, San Jose, California 95134
Barbara Sparks
Affiliation:
Novellus Systems, Inc., 3970 North First Street, San Jose, California 95134
David Mordo
Affiliation:
Novellus Systems, Inc., 3970 North First Street, San Jose, California 95134
*
a)Author to whom correspondence should be addressed.
Get access

Abstract

Fluorine doping of silicon dioxide films in tetraethylorthosilicate (TEOS)-based plasma enhanced chemical vapor deposition (PECVD) processes was investigated using two fluorine dopant sources, C2F6 and 1,2 bis[methyldifluorosilyl]ethane (FASi-4). Much as TEOS-based undoped silica glass (USG) films display improved step coverage over silane-based USG films, it was suspected that fluorinated silica glass (FSG) films deposited using the relatively new TEOS-based fluorine source FASi-4 might have improved gap fill capabilities as compared to FSG films deposited using gas-based C2F6 fluorine sources. The physical properties and intermetal gap filling capabilities of FSG films deposited using FASi-4 as a fluorine dopant source were compared with the properties of FSG films deposited using C2F6 as a fluorine source. Fluorine dopant levels in the films were found to be linear functions of C2F6TEOS and FASi-4yTEOS ratios. The RI, film stress, and gap fill capability were found to be strongly dependent on the Si–F content in the film regardless of dopant source reagents. Improved gap fill characteristics were observed in films doped with FASi-4 at a given Si–F/Si–O% as compared to C2F6-based FSG films. Dopant source dependence of doping characteristics, physical properties, and gap filling capability of FSG films is reported.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 1 , January 1997 , pp. 70 - 74
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Laxman, R. K., Semiconductor Int. (May 1995), 71 (1995).Google Scholar
2.Yoo, W. S. and Swope, R., Jpn. J. Appl. Phys. 35, L273 (1995).Google Scholar
3.Carl, D., Yoo, W. S., Swope, R., Schuchmann, S., Nijenhuis, H. te, Harrus, A., and van den Hoek, W., Proc. Int. Conf. Adv. Metallization and Interconnect Sys. for ULSI Applications (1995).Google Scholar
4.Nishimoto, Y., Tokumatsu, N., Fukuyama, T., and Maeda, K., Ext. Abstr. of 19th Int. Conf. Solid State Devices and Materials (1987), p. 447.Google Scholar
5.Hatanaka, M., Mizushima, Y., Hataishi, O., and Furumura, Y., Proc. 8th Int. VLSI Multilevel Interconnection Conf. (VMIC) (1991), p. 435.Google Scholar
6.Pai, C. S., Miner, J. F., and Foo, P. D., Proc. 8th Int. VLSI Multilevel Interconnection Conf. (VMIC) (1991), p. 442.Google Scholar
7.Usami, T., Shimokawa, K., and Yoshimaru, M., Jpn. J. Appl. Phys. 33, 408 (1994).Google Scholar
8.Usami, T., Shimokawa, K., and Yoshimaru, M., Ext. Abstr. of Conf. Solid State Devices and Materials (1993), p. 161.Google Scholar
9.Carl, D., Schuchmann, S., Kilgore, M., Swope, R., and van den Hoek, W., Proc. 12th Int. VLSI Multilevel Interconnection Conf. (VMIC) (1995), p. 97.Google Scholar
10.Shannon, V. L. and Karim, M. Z., Thin Solid Films 270, 498 (1995).Google Scholar
11.Shapiro, M. J., Nguyen, S. V., Matsuda, T., and Dobuzinsky, D., Thin Solid Films 290, 503 (1995).Google Scholar