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Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing

Published online by Cambridge University Press:  31 January 2011

Yutaka Tokuda
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-03, Japan
Nobuji Kobayashi
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-03, Japan
Yajiro Inoue
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-03, Japan
Akira Usami
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya 466, Japan
Makoto Imura
Affiliation:
Technical Division, Japan Silicon Co. Ltd., Noda 278, Japan
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Abstract

The annihilation of thermal donors in silicon by rapid thermal annealing (RTA) has been studied with deep-level transient spectroscopy. The electron trap AO (Ec – 0.13 eV) observed after heat treatment at 450 °C for 10 h, which is identified with the thermal donor, disappears by RTA at 800 °C for 10 s. However, four electron traps, A1 (Ec 0.18 eV), A2 (Ec – 0.25 eV), A3 (Ec – 0.36 eV), and A4 (Ec – 0.52 eV), with the concentration of ∼1012 cm−3 are produced after annihilation of thermal donors by RTA. These traps are also observed in silicon which receives only RTA at 800 °C. This indicates that traps A1–A4 are thermal stress induced or quenched-in defects by RTA, not secondary defects resulting from annealing of thermal donors.

Type
Materials Communications
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1Fuller, C.S. and Logan, R.A., J. Appl. Phys. 28, 1546 (1958).Google Scholar
2O'Mara, W. C., Parker, J. E., Butler, P., and Gat, A., Appl. Phys. Lett. 46, 299 (1985).CrossRefGoogle Scholar
3Stein, H.J., Hahn, S.K., and Shatas, S.C., J. Appl. Phys. 59, 3495 (1986).CrossRefGoogle Scholar
4Lang, D. V., J. Appl. Phys. 45, 3023 (1974).CrossRefGoogle Scholar
5Tokuda, Y., Shimizu, N., and Usami, A., Japan. J. Appl. Phys. 18, 309 (1979).CrossRefGoogle Scholar
6Borenstein, J.T., Jones, J. T., Corbet, J.W., Oehrlein, G.S., and Kleinhenz, R. L., Appl. Phys. Lett. 49, 199 (1986).CrossRefGoogle Scholar
7Barbier, D., Remram, M., Joly, J. F., and Laugier, A., J. Appl. Phys. 61, 156 (1987).CrossRefGoogle Scholar
8Ransom, C.M., Sedgwick, T. O., and Cohen, S.A., Mat. Res. Soc. Symp. Proc. 52, 153 (1986).CrossRefGoogle Scholar
9Frenkel, J., Phys. Rev. 54, 647 (1938).CrossRefGoogle Scholar
10Kimerling, L.C. and Benton, J.L., Appl. Phys. Lett. 39, 410 (1981).CrossRefGoogle Scholar
11Bentini, G., Correra, L., and Donolato, C., J. Appl. Phys. 56, 2922 (1984).CrossRefGoogle Scholar