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Deposition of diamond/β–SiC Gradient Composite Films by Microwave Plasma-assisted Chemical Vapor Deposition

Published online by Cambridge University Press:  31 January 2011

Yulong Shi ,
Minhui Tan  and
X. Jiang
Yulong Shi
Affiliation:
Fraunhofer Institute for Surface Engineering and Thin Films, Bienroder Weg 54E, D-38108, Braunschweig, Germany
Minhui Tan
Affiliation:
Fraunhofer Institute for Surface Engineering and Thin Films, Bienroder Weg 54E, D-38108, Braunschweig, Germany
X. Jiang
Affiliation:
Fraunhofer Institute for Surface Engineering and Thin Films, Bienroder Weg 54E, D-38108, Braunschweig, Germany
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Abstract

Mixed-phase diamond/β–SiC composite films with compositional gradient were prepared by microwave plasma-assisted chemical vapor deposition using a gas mixture of hydrogen, methane and tetramethylsilane (TMS). Single-crystalline silicon wafers, pretreated with diamond nanoparticles before deposition, were used as substrates. The film characterization by scanning electron microscopy, electron probe microanalysis, and energy-dispersive x-ray analysis shows that the contents of diamond and silicon carbide in the films vary with TMS flow rate. Diamond/β–SiC composite films with compositional gradients are achievable by varying the TMS flow rate during the film growth process.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 17 , Issue 6 , June 2002 , pp. 1241 - 1243
Copyright
Copyright © Materials Research Society 2002

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