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Dielectric properties and energy storage capability of antiferroelectric Pb0.92La0.08Zr0.95Ti0.05O3 film-on-foil capacitors

Published online by Cambridge University Press:  31 January 2011

Beihai Ma ,
Do-Kyun Kwon ,
Manoj Narayanan  and
U. (Balu) Balachandran
Beihai Ma*
Affiliation:
Energy Systems Division, Argonne National Laboratory, Argonne, Illinois 60439
Do-Kyun Kwon
Affiliation:
Energy Systems Division, Argonne National Laboratory, Argonne, Illinois 60439
U. (Balu) Balachandran
Affiliation:
Energy Systems Division, Argonne National Laboratory, Argonne, Illinois 60439
*
a) Address all correspondence to this author. e-mail: bma@anl.gov
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Abstract

Antiferroelectric (AFE) Pb0.92La0.08Zr0.95Ti0.05O3 (PLZT) films were grown on nickel foils with lanthanum nickel oxide buffer by chemical solution deposition. We observed field-induced AFE-to-ferroelectric (FE) phase transition. The electric field for the AFE-to-FE phase transition (EAF ≈ 270 kV/cm) and that for the reverse phase transition (EFA ≈ 230 kV/cm) were measured at room temperature on samples with PLZT films of ≈1-µm thickness. Relative permittivity of ≈560 and dielectric loss of <0.05 were measured near zero DC bias field. Hysteresis loop analysis showed that energy densities of ≈53 and 37 J/cm3 can be stored and recovered from the film-on-foil capacitors at 25 and 150 °C, respectively. Highly accelerated life tests were conducted. The projected mean time to failure is >5000 h when the capacitors are operated at room temperature with an applied field of ≈300 kV/cm.

Keywords

Dielectric propertiesEnergy storageFerroelectric
Type
Rapid Communications
Information
Journal of Materials Research , Volume 24 , Issue 9 , September 2009 , pp. 2993 - 2996
Copyright
Copyright © Materials Research Society 2009

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References

1Pan, W., Zhang, Q., Bhalla, A. and Cross, L.E.: Field-forced anti-ferroelectric-to-ferroelectric switching in modified lead zirconate titanate stannate ceramics. J. Am. Ceram. Soc. 72, 571 (1989).CrossRefGoogle Scholar
2Yamakawa, K., Trolier-Mckinstry, S., Dougherty, J.P. and Krupanidhi, S.B.: Reactive magnetron co-sputtered antiferroelectric lead zirconate thin films. Appl. Phys. Lett. 67, 2014 (1995).CrossRefGoogle Scholar
3Kim, I.W., Lee, D.S., Kang, S.H. and Ahn, C.W.: Antiferroelectric characteristics and low frequency dielectric dispersion of Pb1.075 La0.025(Zr0.95Ti0.05)O3 thin films. Thin Solid Films 441, 115 (2003).CrossRefGoogle Scholar
4Dougherty, J.P., Gachigi, K.W., Shrout, T.R., Jang, S.J., Randall, C.A. and Pruna, P.M.: Cardiac defibrillator with multi-phase ferroelectric/antiferroelectric capacitor. U.S. Patent No. 5728138 (March 17, 1998).Google Scholar
5Pelaiz-Barranco, A., Guerra, J.D.S., Garcia-Zaldivar, O., CalderonPinar, F., Araujo, E.B., Hall, D.A., Mendoza, M.E. and Eiras, J.A.: Effects of lanthanum modification on dielectric properties of Pb(Zr0.90,Ti0.10)O3 ceramics: Enhanced antiferroelectric stability. J. Mater. Sci. 43, 6087 (2008).CrossRefGoogle Scholar
6Ma, B., Kwon, D.K., Narayanan, M. and Balachandran, U.: Leakage current characteristics and dielectric breakdown of antiferro-electric Pb0.92La0.08Zr0.95Ti0.05O3 film capacitors grown on metal foils. J. Phys. D: Appl. Phys. 41, 205003 (2008).CrossRefGoogle Scholar
7Ishchuk, V.M., Baumer, V.N. and Sobolev, V.L.: The influence of the coexistence of ferroelectric and antiferroelectric states on the lead lanthanum zirconate titanate crystal structure. J. Phys. Con-dens. Matter 17, L177 (2005).CrossRefGoogle Scholar
8Ma, B., Kwon, D.K., Narayanan, M. and Balachandran, U.: Fabrication of antiferroelectric PLZT films on metal foils. Mater. Res. Bull. 44, 11 (2009).CrossRefGoogle Scholar
9Kong, L.B. and Ma, J.: Preparation and characterization of antiferroelectric PLZT2/95/5 thin films via a sol–gel process. Mater. Lett. 56, 30 (2002).CrossRefGoogle Scholar
10Seveno, R., Gundel, H.W. and Seifert, S.: Preparation of antiferro-electric PbZrxTi1-xO3 thin films on LaSrMnO3-coated steel substrates. Appl. Phys. Lett. 79, 4204 (2001).CrossRefGoogle Scholar
11Zou, Q., Ruda, H.E. and Yacobi, B.G.: Improved dielectric properties of lead zirconate titanate thin films deposited on metal foils with LaNiO3 buffer layers. Appl. Phys. Lett. 78, 1282 (2001).CrossRefGoogle Scholar
12Ma, B., Narayanan, M. and Balachandran, U.: Dielectric strength and reliability of ferroelectric PLZT films deposited on nickel substrates. Mater. Lett. 63, 1353 (2009).CrossRefGoogle Scholar
13Polcawich, R.G., Feng, C-N., Kurtz, S., Perini, S., Moses, P.J. and Trolier-McKinstry, S.: AC and DC electrical stress reliability of piezoelectric lead zirconate titanate (PZT) thin films. Int. J. Microcircuits Electron Packag. 23, 85 (2000).Google Scholar