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Direct chemical vapor deposition growth of tunable HfSiON films by a new precursor combination

Published online by Cambridge University Press:  03 March 2011

Bin Xia ,
Matthew L. Fisher ,
Harold Stemper  and
Ashutosh Misra
Bin Xia
Affiliation:
Air Liquide Electronics U.S. LP, Dallas, Texas 75243
Matthew L. Fisher
Affiliation:
Air Liquide Electronics U.S. LP, Dallas, Texas 75243
Harold Stemper
Affiliation:
Air Liquide Electronics U.S. LP, Dallas, Texas 75243
Ashutosh Misra*
Affiliation:
Air Liquide Electronics U.S. LP, Dallas, Texas 75243
*
a) Address all correspondence to this author. e-mail: ashutosh.misra@airliquide.com
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Abstract

Hafnium silicon oxynitride (HfSiON) films were deposited on 200-mm silicon substrates by low-pressure chemical vapor deposition (LPCVD) from a combination of trisilylamine (TSA) and tetrakis(diethylamido)hafnium(IV) (TDEAH) in the temperature range 450 to 575 °C. A highly volatile and carbon-free silicon precursor TSA was used to deposit HfSiON films for the first time. HfSiON films were deposited in a single step with no need of a post-treatment process for nitrogen incorporation. The film composition was tuned in a wide compositional range, and high growth rates were achieved. NH3 was found to have profound effects on film growth rate, metal ratio (Si% or Hf%), nitrogen incorporation, and carbon residue in the films.

Keywords

Chemical vapor deposition (CVD)DielectricFilm
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 4 , April 2007 , pp. 1024 - 1028
Copyright
Copyright © Materials Research Society 2007

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References

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