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Domain growth of Dy2O3 buffer layers on SrTiO3

Published online by Cambridge University Press:  31 January 2011

A. Catana  and
J-P. Locquet
A. Catana
Affiliation:
IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland
J-P. Locquet
Affiliation:
IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland
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Abstract

Dy2O3 layers have been grown on SrTiO3 by molecular beam epitaxy. X-ray and electron diffraction patterns clearly show that Dy2O3 grows epitaxially on SrTiO3 with {100} planes parallel to the substrate surface. Transmission electron microscopy reveals that the Dy2O3 film breaks up into small domains (10–40 nm). This leads to the formation of terraces which limits the structural perfection of thin overgrown DyBa2Cu3O7 by introducing steps and small misorientations (within 3°). The resulting surface corrugation does not preclude the growth of epitaxial c-axis DyBa2Cu3O7 films with a Tc0 of 86 K. Crystallographic analysis and image calculations show that the domain growth of Dy2O3 is associated with the formation of 90° rotation twins.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 6 , June 1993 , pp. 1373 - 1378
Copyright
Copyright © Materials Research Society 1993

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References

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