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Effects of heat treatment and sintering additives on thermal conductivity and electrical resistivity in fine-grained SiC ceramics

Published online by Cambridge University Press:  31 January 2011

Guo-Dong Zhan ,
Mamoru Mitomo  and
Amiya K. Mukherjee
Guo-Dong Zhan
Affiliation:
Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616
Mamoru Mitomo
Affiliation:
National Institute for Materials Science, Namiki 1–1, Tsukuba-shi, Ibaraki 305, Japan
Amiya K. Mukherjee
Affiliation:
Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616
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Abstract

The effects of heat treatment and sintering additives on the thermal conductivity and electrical resistivity of fine-grained SiC materials were investigated. The thermal conductivity and the electrical resistivity of dense SiC materials were measured at room temperature by a laser flash technique and a current-voltage method, respectively. The results indicated that the thermal conductivity and electrical resistivity of the SiC materials were dependent on the sintering additives and the resultant microstructure. Annealed materials with oxide additives developed microstructures consisting of elongated grains of various α/β–SiC polytypes. In contrast, annealed materials with oxynitride additives had microstructures consisting of fine equiaxed grains entirely of β–SiC phase. For the annealed materials with oxide additives the observed thermal conductivity was over 110 W/mK. For the annealed materials with oxynitride additives the observed value was 47 W/mK. The electrical resistivity of a hot-pressed material with oxide sintering additives decreased after annealing. For annealed materials with oxynitride additives, the electrical resistivity was even lower. High-resolution electron microscopy revealed a thin amorphous phase along the grain boundaries. Energy dispersive x-ray spectroscopy results showed that there was segregation of both Al and O atoms and a very small amount of Y atoms at grain boundaries. The results indicated that the chemistry and structure of the grain boundary has significant influence on thermal and electrical properties in SiC.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 9 , September 2002 , pp. 2327 - 2333
Copyright
Copyright © Materials Research Society 2002

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