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Electric properties of barium–strontium titanate thin films deposited by two-step radio-frequency sputtering

Published online by Cambridge University Press:  31 January 2011

J. S. Fang ,
C. T. Chang  and
T. S. Chin
J. S. Fang*
Affiliation:
Department of Materials Science and Engineering, National Huwei Institute of Technology, YunLin, 632, Taiwan, Republic of China
C. T. Chang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 300, Taiwan, Republic of China
T. S. Chin
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 300, Taiwan, Republic of China
*
a)Address all correspondence to this author.jsfang@sunws.nhit.edu.tw
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Abstract

Barium-strontium titanate (BST) thin films were prepared by a two-step deposition using radio-frequency magnetron sputtering on Pt/Ti/SiO2-buffered Si(100) substrate. The initial BST layer thickness and intermediate annealing strongly affect the resultant electric properties of the two-step BST thin films. The optimal two-step BST films, with a first-layer thickness of 30 nm intermediate annealed at 610 °C under 1 torr oxygen. The dielectric breakdown and leakage current density of the two-step film are above 625 kV/cm and 9.5 nA/cm2 at 100 kV/cm, respectively, compared with 400 kV/cm and 17 nA/cm2 for the one-step films. We conclude that the two-step deposition dramatically improves dielectric breakdown and enhances leakage current density while keeping the dielectric constant uninfluenced.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 9 , September 2001 , pp. 2680 - 2686
Copyright
Copyright © Materials Research Society 2001

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