Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2025-01-02T17:59:22.909Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrochemical and photoelectrochemical deposition of thallium(III) oxide thin films

Published online by Cambridge University Press:  31 January 2011

Richard J. Phillips ,
Michael J. Shane  and
Jay A. Switzer
Richard J. Phillips
Affiliation:
University of Pittsburgh, Department of Materials Science and Engineering, 848 Benedum Hall, Pittsburgh, Pennsylvania 15261
Michael J. Shane
Affiliation:
University of Pittsburgh, Department of Materials Science and Engineering, 848 Benedum Hall, Pittsburgh, Pennsylvania 15261
Jay A. Switzer
Affiliation:
University of Pittsburgh, Department of Materials Science and Engineering, 848 Benedum Hall, Pittsburgh, Pennsylvania 15261
Get access

Abstract

Thallium (III) oxide is a degenerate n-type semiconductor with high optical transparency and electrical conductivity. Films of thallium(III) oxide can be electrochemically deposited onto conducting and p-type semiconducting substrates, and photoelectrochemically deposited onto n-type semiconducting substrates. Films deposited at currents below the mass transport limit onto platinum or stainless steel were columnar, and the current efficiency on stainless steel was 103 ±2%. Dendritic films were deposited at mass-transport-limited currents. Films were deposited with thicknesses ranging from 0.1 μm on n-silicon, to 170 μm on stainless steel. The photoelectrochemically deposited films were “direct-written” onto n-silicon, since the material was deposited only at irradiated portions of the electrode. Thin films were grown by irradiating the n-silicon with 450 nm monochromatic light, since the light was strongly absorbed by the thallium(III) oxide. The most uniform thin films were deposited when the n-silicon was initially irradiated with a short pulse of high intensity light. The pulse apparently promoted instantaneous nucleation of a high density of thallium(III) oxide nuclei.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 4 , August 1989 , pp. 923 - 929
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Sleight, A. W., Gillson, J.L., and Chamberland, B.L., Mater. Res. Bull. 5, 807 (1970).Google Scholar
2Shukla, V. N. and Wirtz, G.P., J. Am. Ceram. Soc. 60, 253 (1977); ibid., 60, 259 (1977).CrossRefGoogle Scholar
3Wirtz, G.P., Yu, C.J., and Doser, R.W., ibid., 64, 269 (1981).Google Scholar
4Geserich, H.P., Phys. Status Solidi 25, 741 (1968).CrossRefGoogle Scholar
5Switzer, J. A., J. Electrochem. Soc. 133, 722 (1986).CrossRefGoogle Scholar
6Switzer, J.A., U.S. Patents 4,492,811; 4,495,046; 4,521,499; 4,592,807; 4,626,322; and 4,608,750.Google Scholar
7Switzer, J. A., Am. Ceram. Soc. Bull. 66, 1521 (1987).Google Scholar
8Switzer, J. A. and Phillips, R. J., in Better Ceramics Through Chemistry III, edited by Brinker, C. J., Clark, D. E., and Ulrich, D. R. (Mater. Res. Soc. Proc., Pittsburgh, PA, 1988), Vol. 121, pp. 111–114.Google Scholar
9Wirtz, G. P. and Siebert, D. C., J. Cryst. Growth 32, 274 (1976).CrossRefGoogle Scholar
10Bockris, J. O'M. and Reddy, A. K. N., Modern Electrochemistry (Plenum Publishing, New York, 1977), pp. 1218–1221.Google Scholar
11Gileadi, E., Kirowa-Eisner, E., and Penciner, J., Interfacial Electrochemistry (Addison-Wesley, Reading, MA, 1975), pp. 140–142.Google Scholar
12Switzer, J. A., J. Electrochem. Soc. 136, 1009 (1989).CrossRefGoogle Scholar
13Bard, A.J., Science 207, 139 (1980).CrossRefGoogle Scholar
14Heller, A., Ace. Chem. Res. 14, 154 (1981).Google Scholar