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Entropy-driven loss of gas phase group V species from gold/III-V compound semiconductor systems

Published online by Cambridge University Press:  31 January 2011

John H. Pugh  and
R. Stanley Williams
John H. Pugh
Affiliation:
Department of Chemistry and Biochemistry and Solid State Science Center, University of California, Los Angeles, California 90024
R. Stanley Williams
Affiliation:
Department of Chemistry and Biochemistry and Solid State Science Center, University of California, Los Angeles, California 90024
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Abstract

Temperature-dependent chemical interactions between Au and nine III-V compound semiconductors (III = Al,Ga,In and V = P,As,Sb) have been calculated using bulk thermodynamic properties. Enthalpic considerations alone are insufficient to predict metal/ compound semiconductor reactivities. The entropy of vaporization of the group V elements is shown to be an extremely important driving force for chemical reactions involving the III-V's, since it enables several endothermic reactions to occur spontaneously under certain temperature and pressure conditions. Plots of either Gibbs' free energies of reaction or equilibrium vapor pressure of the group V element versus temperature are used to predict critical reaction temperatures for each of the systems studied. These plots agree extremely well with previous experimental observations of thin film reactions of Au on GaAs.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 2 , April 1986 , pp. 343 - 351
Copyright
Copyright © Materials Research Society 1986

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