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Epitaxial growth and interfaces of high-quality InN films grown on nitrided sapphire substrates

Published online by Cambridge University Press:  16 April 2013

Fangliang Gao ,
Yunfang Guan ,
Jingling Li ,
Junning Gao ,
Junqiu Guo  and
Guoqiang Li
Fangliang Gao
Affiliation:
Department of Electronic Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Yunfang Guan
Affiliation:
Department of Electronic Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Jingling Li*
Affiliation:
Department of Electronic Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Junning Gao
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Junqiu Guo
Affiliation:
Department of Electronic Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Guoqiang Li*
Affiliation:
Department of Electronic Materials, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
*
a)Address all correspondence to this author. e-mail: msgli@scut.edu.cn
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Abstract

InN films have been grown on sapphire substrates nitrided by N plasma with different durations by radio-frequency plasma assisted molecular beam epitaxy (RF-MBE). In-depth investigation reveals that AlN is generated on a sapphire surface during the nitridation, and 60 min nitridation helps in the formation of an ordered and flat AlN interlayer between the substrate and the InN film, which improves the surface migration of In atoms on the substrate, and consequently helps in obtaining a single-crystalline c-plane InN film of high quality with 1.0 × 1019 cm−3 carrier density and 1350 cm2/(V·s) carrier mobility. Too short nitridation duration will result in a polycrystalline InN film, and too long nitridation duration will damage the surface quality of the newly generated AlN interlayer which consequently deteriorates the InN film quality. Control of the AlN interlayer quality plays a critical role in the growth of a high-quality InN epitaxial film on the sapphire substrate.

Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 9 , 14 May 2013 , pp. 1239 - 1244
Copyright
Copyright © Materials Research Society 2013 

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