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Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy

Published online by Cambridge University Press:  03 March 2011

Hidenori Hiramatsu ,
Kazushige Ueda ,
Kouhei Takafuji ,
Hiromichi Ohta ,
Masahiro Hirano ,
Toshio Kamiya  and
Hideo Hosono
Hidenori Hiramatsu*
Affiliation:
Hosono Transparent Electro-Active Materials (TEAM) Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology (JST) Agency, KSP C-1232, Takatsu, Kawasaki 213-0012, Japan
Kazushige Ueda
Affiliation:
Hosono Transparent Electro-Active Materials (TEAM) Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology (JST) Agency, KSP C-1232, Takatsu, Kawasaki 213-0012, Japan
Kouhei Takafuji
Affiliation:
Hosono Transparent Electro-Active Materials (TEAM) Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology (JST) Agency, KSP C-1232, Takatsu, Kawasaki 213-0012, Japan; and Materials and Structures Laboratory, Tokyo Institute of Technology, Midori, Yokohama 226-8503, Japan
Hiromichi Ohta
Affiliation:
Hosono Transparent Electro-Active Materials (TEAM) Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology (JST) Agency, KSP C-1232, Takatsu, Kawasaki 213-0012, Japan; and Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Chikusa, Nagoya 464-8603, Japan
Masahiro Hirano
Affiliation:
Hosono Transparent Electro-Active Materials (TEAM) Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology (JST) Agency, KSP C-1232, Takatsu, Kawasaki 213-0012, Japan
Toshio Kamiya
Affiliation:
Hosono Transparent Electro-Active Materials (TEAM) Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology (JST) Agency, KSP C-1232, Takatsu, Kawasaki 213-0012, Japan; and Materials and Structures Laboratory, Tokyo Institute of Technology, Midori, Yokohama 226-8503, Japan
Hideo Hosono
Affiliation:
Hosono Transparent Electro-Active Materials (TEAM) Project, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology (JST) Agency, KSP C-1232, Takatsu, Kawasaki 213-0012, Japan; and Materials and Structures Laboratory, Tokyo Institute of Technology, Midori, Yokohama 226-8503, Japan
*
a) Address all correspondence to this author. e-mail: h-hiramatsu@net.ksp.or.jp
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Abstract

Processes and preparation conditions for growing epitaxial thin films of Cu-based, layered oxychalcogenides LnCuOCh (Ln = La, Ce, Pr or Nd; Ch = S1-xSex or Se1-yTey) are reported. Epitaxial thin films on MgO (001) substrates were prepared by a reactive solid-phase epitaxy method. Four-axes high-resolution x-ray diffraction measurements revealed that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO and the internal stress of the crystalline lattices in the films are relaxed during thermal-annealing process of the reactive solid-phase epitaxy. Furthermore, except for CeCuOS, systematic variations in the lattice constant by chalcogen or lanthanide ion substitutions were observed. These results demonstrated that the reactive solid-phase epitaxy is an efficient technique for fabricating LnCuOCh epitaxial films.

Keywords

Crystal growthEpitaxyCrystallographic structure
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 7 , July 2004 , pp. 2137 - 2143
Copyright
Copyright © Materials Research Society 2004

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References

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