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Fabrication of on-chip barium strontium titanate capacitors by metallo-organic decomposition

Published online by Cambridge University Press:  31 January 2011

Antonio B. Catalan ,
Shih-Chia Chang ,
Roger J. Poisson ,
William J. Baney  and
John E. Benci
Antonio B. Catalan
Affiliation:
Electrical and Electronics Engineering Department, General Motors Research and Development Laboratories, Warren, Michigan 48090–9055
Shih-Chia Chang
Affiliation:
Electrical and Electronics Engineering Department, General Motors Research and Development Laboratories, Warren, Michigan 48090–9055
Roger J. Poisson
Affiliation:
Advanced Spec. MOS Department, Delco Electronics Corporation, Kokomo, Indiana 46904–9005
William J. Baney
Affiliation:
Advanced Spec. MOS Department, Delco Electronics Corporation, Kokomo, Indiana 46904–9005
John E. Benci
Affiliation:
Materials Science Department, Wayne State University, Detroit, Michigan 48202
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Abstract

Metallo-organic thin film decomposition (MOD) was used in forming barium strontium titanate (BST) thin film capacitors on phosphorus doped polysilicon films deposited on 4 in. silicon wafers. A single step deposition process yielded highly uniform, crack-free BST films ranging up to 0.25 εm in thickness and having various step heights and dimensional area. Scanning electron microscopy (SEM) showed very good step coverage and planarization of the BST. The capacitors had capacitance densities above 200 nF/cm2, leakage current densities less than 1.55 εA/cm2 at a bias voltage of 10 V, and a dielectric breakdown field above 1 MVycm. Small temperature coefficients of capacitance and dissipation (tan δ) were also observed. Frequency response measurements were made using the BST capacitors and on-chip resistors in low pass and high pass circuit configurations. A plot of relative gain and phase angle versus frequency showed excellent agreement with predicted results.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 6 , June 1998 , pp. 1548 - 1552
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1.Kawano, H., Morii, K., and Nakayama, Y., J. Appl. Phys. 73, 5141 (1993).CrossRefGoogle Scholar
2.Koyama, K., Sakuma, T., Yamamichi, S., Watanabe, H., Aoki, H., Ohya, S., Miyasaka, Y., and Kikkawa, T., IEEE IEDM–91, 823 (1991).Google Scholar
3.Yoon, Y. S., Kang, W. N., Shin, H. S., and Yom, S. S., J. Appl. Phys. 73, 1547 (1993).CrossRefGoogle Scholar
4.Joshi, P. C. and Krupanidhi, S. B., J. Appl. Phys. 73, 7627 (1993).CrossRefGoogle Scholar
5.Moazzami, R., Hu, C., and Sheppard, W. H., IEEE Trans. Electron Devices 3, 2044 (1992).CrossRefGoogle Scholar
6.Kamiyama, S., Saeki, T., Mori, H., and Numasawa, Y., IEEE IEDM–91, 827 (1991).Google Scholar
7.Abe, K. and Komatsu, S., Jpn. J. Appl. Phys. 31, 2985 (1992).Google Scholar
8.Joshi, P. C. and Krupanidhi, S. B., Appl. Phys. Lett. 61, 1525 (1992).CrossRefGoogle Scholar
9.Braunstein, G. and Paz-Pujalt, G. R., Thin Solid Films 216, 1 (1992).CrossRefGoogle Scholar
10.Catalan, A. B., Mantese, J. V., Micheli, A. L., Schubring, N. W., and Poisson, R. J., J. Appl. Phys. 76, 2541 (1994).CrossRefGoogle Scholar
11.Mantese, J. V., Micheli, A. L., Hamdi, A. H., and Vest, R. W., MRS Bull. 14 (10), 48 (1989).CrossRefGoogle Scholar
12. Strem Chemicals Inc., 7 Mulliken Way, Dexter Industrial Park, Newport, MA 01950–4098.Google Scholar
13.Mohammed, M. S., Naik, R., Mantese, J. V., Schubring, N. W., Micheli, A. L., and Catalan, A. B., J. Mater. Res. 11, 2588 (1996).CrossRefGoogle Scholar
14.Abe, K. and Komatsu, S., J. Appl. Phys. 77 (12), June 15 (1995).Google Scholar