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Fluorine-doped tin oxide films with a high figure of merit fabricated by spray pyrolysis

Published online by Cambridge University Press:  21 May 2015

Oleksandr Malik ,
Francisco Javier De la Hidalga-Wade  and
Raquel Ramírez Amador
Oleksandr Malik*
Affiliation:
Electronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), Puebla 72000, Mexico
Francisco Javier De la Hidalga-Wade
Affiliation:
Electronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), Puebla 72000, Mexico
Raquel Ramírez Amador
Affiliation:
Mechatronics Department, Universidad Tecnológica de Huejotzingo, Puebla 74169, Mexico
*
a)Address all correspondence to this author. e-mail: amalik@inaoep.mx
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Abstract

Fluorine-doped tin oxide (FTO) thin films were deposited by spray pyrolysis in a pulse mode at 450 °C on glass substrates, using an alcoholic solution of SnCl4·5H2O and NH4F with different F/Sn ratios in the precursor solution. The film structure was nanocrystalline for all molar F/Sn ratios in the solution from 0 to 1.0. Postdeposition annealing treatments were not carried out. The films with a F/Sn = 0.35–1.0 ratio present a high grain orientation in the (200) crystallographic plane. A minimum sheet resistance of 4.5 Ω/sq, a resistivity of 2.2 × 10−4 Ω cm, a maximum electron mobility of 21.6 cm2/V s, and a carrier concentration of 1.7 × 1021 cm−3, corresponding to a strong degeneration of the electron gas in the conduction band, as well as a mean value of the transmittance of 0.84 in the visible spectral range, were obtained for the films fabricated with a F/Sn = 0.5 ratio. A high value of the figure of merit was obtained using two methods (38.8 × 10−3 Ω−1 and 5.75 Ω−1), that is, comparable with the highest values reported to date.

Type
Articles
Information
Journal of Materials Research , Volume 30 , Issue 13 , 14 July 2015 , pp. 2040 - 2045
Copyright
Copyright © Materials Research Society 2015 

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References

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