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Germanium segregation in the Co/SiGe/Si(001) thin film system

Published online by Cambridge University Press:  31 January 2011

Peter T. Goeller ,
Boyan I. Boyanov ,
Dale E. Sayers ,
Robert J. Nemanich ,
Alline F. Myers  and
Eric B. Steel
Peter T. Goeller
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
Boyan I. Boyanov
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
Dale E. Sayers
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
Robert J. Nemanich*
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
Alline F. Myers
Affiliation:
Microanalysis & Surface Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899
Eric B. Steel
Affiliation:
Microanalysis & Surface Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899
*
a)Address all correspondence to this author. e-mail: Robert Nemanich@ncsu.edu
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Abstract

Cobalt disilicide contacts to silicon–germanium alloys were formed by direct deposition of pure cobalt metal onto silicon–germanium films on Si(001) substrates. Segregation of germanium was observed during the reaction of the cobalt with the silicon–germanium alloy. The nature of the Ge segregation was studied by transmission electron microscopy, energy dispersive spectroscopy, and x-ray diffraction. In the case of cobalt films deposited onto strained silicon–germanium films, the Ge segregation was discovered to be in the form of Ge-enriched Si1−xGex regions found at the surface of the film surrounding CoSi and CoSi2 grains. In the case of cobalt films deposited onto relaxed silicon–germanium films, the Ge segregation was dependent on formation of CoSi2. In samples annealed below 800 °C, where CoSi was the dominant silicide phase, the Ge segregation was similar in form to the strained Si1−xGex case. In samples annealed above 800 °C, where CoSi2 was the dominant silicide phase, the Ge segregation was also in the form of tetrahedron-shaped, Ge-enriched, silicon–germanium precipitates, which formed at the substrate/silicon– germanium film interface and grew into the Si substrate. A possible mechanism for the formation of these precipitates is presented based on vacancy generation during the silicidation reaction coupled with an increased driving force for Ge diffusion due to silicon depletion in the alloy layer.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 11 , November 1999 , pp. 4372 - 4384
Copyright
Copyright © Materials Research Society 1999

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