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Growth of heteroepitaxial GaSb thin films on Si(100) substrates

Published online by Cambridge University Press:  03 March 2011

Thang Nguyen ,
Walter Varhue ,
Edward Adams ,
Mark Lavoie  and
Stephen Mongeon
Thang Nguyen
Affiliation:
Department of Electrical and Computer Engineering, University of Vermont, Burlington, Vermont 05405
Walter Varhue*
Affiliation:
Department of Electrical and Computer Engineering, University of Vermont, Burlington, Vermont 05405
Edward Adams
Affiliation:
IBM Corporation, Essex Junction, Vermont 05405
Mark Lavoie
Affiliation:
IBM Corporation, Essex Junction, Vermont 05405
Stephen Mongeon
Affiliation:
IBM Corporation, Essex Junction, Vermont 05405
*
a) Address correspondence to this author.e-mail: varhue@emba.uvm.edu
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Abstract

The heteroepitaxial growth of GaSb thin films on Si(100) and GaAs(100) substrates is presented. The growth technique involves the use of atomic Ga and Sb species, which are provided by thermal effusion and radio frequency sputtering, respectively. The crystalline quality of the heteroepitaxial GaSb film on the Si substrate is high despite the larger lattice mismatch. Epitaxial quality is determined by high-resolution x-ray diffraction and Rutherford backscatter spectrometry channeling. Atomic-force microscopy is used to monitor the evolution of surface morphology with increasing film thickness. Transmission electron microscopy shows the formation of stacking faults at the Si/GaSb interface and their eventual annihilation with increasing GaSb film thickness. Annihilation of stacking faults occurs when two next-neighbor mounds meet during the overgrowth of a common adjacent mound.

Keywords

EpitaxySemiconductorThin film
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 8 , August 2004 , pp. 2315 - 2321
Copyright
Copyright © Materials Research Society 2004

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References

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