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High growth rate diamond synthesis in a large area atmospheric pressure inductively coupled plasma

Published online by Cambridge University Press:  31 January 2011

M. A. Cappelli ,
T. G. Owano  and
C. H. Kruger
M. A. Cappelli
Affiliation:
High Temperature Gasdynamics Laboratory, Stanford University, Stanford, California 94305-3032
T. G. Owano
Affiliation:
High Temperature Gasdynamics Laboratory, Stanford University, Stanford, California 94305-3032
C. H. Kruger
Affiliation:
High Temperature Gasdynamics Laboratory, Stanford University, Stanford, California 94305-3032
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Abstract

A study of diamond synthesis in an atmospheric pressure inductively coupled argon-hydrogen-methane plasma is presented. The plasma generated has an active area of 20 cm2 and a free stream temperature of approximately 5000 K. Deposition experiments lasting 1 h in duration have been performed in both stagnation flow and flat plate parallel flow geometries. The diamond film deposited in both configurations are nonuniform yet fairly reproducible. The variation in the growth rates at various regions of the substrate is attributed to the variation in the surface atomic hydrogen flux. Growth rates are as high as 50 μm/h, in regions of the substrate where the atomic hydrogen flux is expected to be large. Little or no growth is observed in regions where the atomic hydrogen is expected to recombine within the thermal boundary layer before arriving at the surface. Individual particles are analyzed by micro-Raman spectroscopy. Large (50 μm) size well-faceted particles show little evidence of non-diamond carbon content and are found to be under a state of compression, displaying shifts in the principal phonon mode as great as 3 cm−1.

Type
Diamond and Diamond-Like Materials
Information
Journal of Materials Research , Volume 5 , Issue 11 , November 1990 , pp. 2326 - 2333
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1Koshino, N., Kurihara, K., Kawarada, M., and Sasaki, K., in Extended Abstracts from the Spring Meeting of the Materials Research Society, April 5–9, 1988, Reno, NV (Materials Research Society, Pittsburgh, PA), p. 85.Google Scholar
2Akatsuka, F., Hirose, Y., and Koniaki, K., Jpn. J. Appl. Phys. 27, L1600 (1988).CrossRefGoogle Scholar
3Matsumoto, S., in Extended Abstracts from the Spring Meeting of the Materials Research Society, April 5–9 1988, Reno, NV (Materials Research Society, Pittsburgh, PA), p. 119.Google Scholar
4Matsumoto, S., Hino, H., and Kobayashi, T., Appl. Phys. Lett. 51, 737 (1987).CrossRefGoogle Scholar
5Hirose, Y., (Japan New Diamond Forum) p. 38, October 24–26, Tokyo, Japan (1988).Google Scholar
6Angus, J. and Hayman, C. C., Science 241, 913 (1988).Google Scholar
7Yarbrough, W. A. and Messier, R., Science 247, 688 (1990).CrossRefGoogle Scholar
8Ohtake, N. and Yoshikawa, M., J. Electrochem. Soc. 137 (1990).Google Scholar
9Owano, T. and Gordon, M. (unpublished research).Google Scholar
10Mitchner, M. and Kruger, C. H., Partially Ionized Gases (J. Wiley and Sons, New York, 1973), p. 47.Google Scholar
11Owano, T., Gordon, M., and Kruger, C. H., submitted to Physics of Fluids B (1990).Google Scholar
12Spitsyn, B.V., Bouilov, L. L., and Derjaguin, B.V., J. Cryst. Growth 52, 219 (1981).Google Scholar
13Spitsyn, B.V. and Bouilov, L. L., in Extended Abstracts No. 15, Diamond and Diamond-Like Materials Synthesis, edited by Johnson, G. H., Badzian, A. R., and Geis, M.W. (Materials Research Society, Pittsburgh, PA, 1988), p. 3.Google Scholar
14Rosner, D.E., Annual Rev. Mater. Sci. 2, 573 (1972).Google Scholar
15Hsu, W. L., J. Vac. Sci. Technol. A 6, 1803 (1988).CrossRefGoogle Scholar
16Frenklach, M. and Spear, K. E., J. Mater. Res. 3, 133 (1988).Google Scholar
17Huang, D., Frenklach, M., and Maroncelli, M., J. Phys. Chem. 92, 6379 (1988).Google Scholar
18Frenklach, M., J. Appl. Phys. 65, 5142 (1989).CrossRefGoogle Scholar
19Goodwin, D. G., in Extended Abstracts No. 19, Technology Update on Diamond Films, edited by Chang, R. P. H., Nelson, D., and Hiraki, A. (Materials Research Society, Pittsburgh, PA, 1989), p. 153.Google Scholar
20Meeks, E., Cappelli, M. A., and Kee, R. J. (unpublished research).Google Scholar
21Vidal, C. R., Cooper, J., and Smith, E.W., Astro. J. Suppl. Ser. No. 214, 25, 37 (1973).CrossRefGoogle Scholar
22Knight, D. S. and White, W. B., J. Mater. Res. 4, 385 (1989).Google Scholar
23Boppart, H., van Straaten, J., and Silvera, I. F., Phys. Rev. B 32, 1423 (1985).CrossRefGoogle Scholar
24Engineering Properties of Selected Ceramic Materials, edited by Lynch, J. F., Ruderer, C. G., and Duckworth, W. H. (The American Ceramic Society, Inc., Columbus, OH, 1966).Google Scholar
25Sherman, W. F., J. Phys. C: Solid State Phys. 18, 1973 (1985).CrossRefGoogle Scholar
26 See, for example, the semi-empirical expression for the binary diffusion coefficient as given by Holman, J. P. in Heat Transfer, 7th ed. (McGraw-Hill, New York, 1990), p. 601.Google Scholar
27Baulch, D. L., Drysdale, D. D., Home, D. G., and Lloyd, A. C., in Evaluated Kinetic Data for High Temperature Reactions, Vol. I, Homogeneous Gas Phase Reactions of the H2−02 System (Butterworth's, London, 1976).Google Scholar