Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2025-01-01T08:48:42.007Z Has data issue: false hasContentIssue false
  • English
  • Français

High-temperature electrical behavior of nanocrystalline and microcrystalline diamond films

Published online by Cambridge University Press:  31 January 2011

N. Govindaraju ,
D. Das ,
R.N. Singh  and
P.B. Kosel
N. Govindaraju
Affiliation:
Department of Chemical and Materials Engineering, University of Cincinnati, Cincinnati, Ohio 45221
D. Das
Affiliation:
Department of Chemical and Materials Engineering, University of Cincinnati, Cincinnati, Ohio 45221
R.N. Singh*
Affiliation:
Department of Chemical and Materials Engineering, University of Cincinnati, Cincinnati, Ohio 45221
P.B. Kosel
Affiliation:
Department of Electrical, Computer Engineering and Computer Science, University of Cincinnati, Cincinnati, Ohio 45221
*
a)Address all correspondence to this author. e-mail: Raj.Singh@uc.edu
Get access

Abstract

Chemical vapor deposition of diamond has opened up new applications in microelectronics, microelectromechanical systems (MEMS), and coating technologies. This paper compares and contrasts the high-temperature electrical behavior of microcrystalline versus nanocrystalline diamond films. Through-thickness current–voltage characteristics between room temperature and 823 K are presented for a series of films synthesized with different gas phase concentrations of nitrogen and argon. One set of samples was characterized by measurements between room temperature and 823 K and a second set by two-step thermal cycling from room temperature to 573 and 823 K. It was found that with increasing nitrogen concentration (up to 0.1% N2), the resistivity slightly increased followed by a decrease at higher concentrations. Activation energies and barrier heights were in general lower for the more defective films. These results in conjunction with material characterization indicated that more defective diamond films were synthesized at higher nitrogen concentrations in the gas phase.

Keywords

DiamondElectrical propertiesNanoscale
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 10 , October 2008 , pp. 2774 - 2786
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Gielisse, P.J.: Handbook of Industrial Diamonds and Diamond Films,, edited by M.A. Prelas, G. Popovici, and L.K. Bigelow (Marcel Dekker Inc., New York, 1998) p. 51Google Scholar
2Willander, M., Friesel, M., Wahab, Q-U., Staumal, B.: Silicon carbide and diamond for high temperature device applications. J. Mater. Sci: Mater. Electron. 17, 1 2006Google Scholar
3Gruen, D.M.: Ultrananocrystalline diamond in the laboratory and the cosmos. MRS Bull. 26(10), 771 2001CrossRefGoogle Scholar
4Kosel, P.B.: High temperature characterization of polycrystalline and amorphous semiconductor films. Manuscript in preparation, University of CincinnatiGoogle Scholar
5Das, D., Jayaseelan, V., Ramamurti, R., Kukreja, R.S., Guo, L., Singh, R.N.: Low surface temperature synthesis and characterization of diamond thin films. Diamond Relat. Mater. 15, 1336 2006CrossRefGoogle Scholar
6Zaitsev, A.M.: Optical Properties of Diamond: A Data Handbook Springer-Verlag Berlin 2001 69CrossRefGoogle Scholar
7Malta, D.M., von Windheim, J.A., Wynands, H.A., Fox, B.A.: Comparison of the electrical properties of simultaneously deposited homoepitaxial and polycrystalline diamond films. J. Appl. Phys. 77(4), 1536 1995CrossRefGoogle Scholar
8von Windheim, J.A., Venkatesan, V., Malta, D.M., Das, K.: Electrical characterization of semiconducting diamond thin films and single crystals. J. Electron. Mater. 22(4), 391 1992CrossRefGoogle Scholar
9Dai, Y., Dai, D., Yan, C., Huang, B., Han, S.: N-type electric conductivity of nitrogen-doped ultrananocrystalline diamond films. Phys. Rev. B 71, 075421 2005CrossRefGoogle Scholar
10Nebel, C.E., Stutzmann, M.: Properties, Growth and Applications of Diamond, edited by M.H. Nazare and A.J. Neves INSPEC, The Institution of Electrical Engineers London, UK 2001 40Google Scholar
11Mort, J., Machonkin, M.A., Okumura, K.: Compensation effects in nitrogen-doped diamond films. Appl. Phys. Lett. 59(24), 3148 1991CrossRefGoogle Scholar
12Borst, T.H., Weis, O.: Boron-doped homoepitaxial diamond layers: Fabrication, characterization and electronics applications. Phys. Status Solidi A 154, 423 1996CrossRefGoogle Scholar
13Thonke, K.: The boron acceptor in diamond. Semicond. Sci Technol. 18(3), S20 2003CrossRefGoogle Scholar
14Muto, Y., Sugino, T., Shirfuji, J., Kobashi, K.: Electrical conduction in undoped diamond films prepared by chemical vapor deposition. Appl. Phys. Lett. 59(7), 843 1991CrossRefGoogle Scholar
15Gonon, P., Boiko, Y., Prawer, S., Jamieson, D.: Poole-Frenkel conduction in polycrystalline diamond. J. Appl. Phys. 79(7), 3778 1996CrossRefGoogle Scholar
16Farrer, R.G.: On the substitutional nitrogen donor in diamond. Solid State Comm. 7, 685 1969CrossRefGoogle Scholar
17Schroder, D.K.: Semiconductor Material and Device Characterization John Wiley & Sons, Inc. New York 1990 251Google Scholar