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Influence of experiment parameters on the growth of cBN films by bias-assisted direct current jet plasma chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

W. J. Zhang  and
S. Matsumoto
W. J. Zhang*
Affiliation:
National Institute for Research in Inorganic Materials, 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan
S. Matsumoto*
Affiliation:
National Institute for Research in Inorganic Materials, 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan
*
a)wjzhang@nirim.go.jp
a)wjzhang@nirim.go.jp
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Abstract

Boron nitride films were synthesized on silicon substrates by radio frequency-bias- assisted direct current jet chemical vapor deposition in Ar–N2–BF3–H2 system. The formation and content of cBN phase were investigated by means of Fourier transform infrared spectroscopy, glancing-angle x-ray diffraction, and scanning electron microscopy. The influences of the experimental parameters, i.e., bias voltage, substrate temperature, and gas composition, on the cBN content in the deposited films were systematically studied, and an experimentally optimum window for the deposition of cBN films was observed. Under optimized conditions, a boron nitride film with cBN content higher than 85% was deposited and a growth rate of about 70 nm/min was achieved.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 12 , December 2000 , pp. 2677 - 2683
Copyright
Copyright © Materials Research Society 2000

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