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Ion mixing of Ni–Pt films on Si

Published online by Cambridge University Press:  31 January 2011

T. Sawada ,
C.S. Pai ,
S.S. Lau ,
D.B. Poker  and
Ch. Buchal
T. Sawada
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, San Diego, La Jolla, California 92093
C.S. Pai
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, San Diego, La Jolla, California 92093
S.S. Lau
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, San Diego, La Jolla, California 92093
D.B. Poker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Ch. Buchal
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
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Abstract

The reactions between bilayered Ni/Pt films and Si (100) substrates induced by thermal annealing and ion mixing were investigated. Thermal annealing of Si/Pt/Ni and Si/Ni/Pt samples led to layer reversal at low temperatures (∼ 300°to 400°C) and the formation of a ternary phase at high temperatures (∼ 700°C). These results are consistent with those reported in the literature. Ion mixing of both types of samples led to silicide formation without layer reversal. This effect is interpreted in terms of a change of moving species from metal (in thermal annealing) to Si (in ion mixing). The mixing efficiency between Pt and Ni is observed to be enhanced when Si is mixed together with these two metals.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 2 , April 1986 , pp. 322 - 326
Copyright
Copyright © Materials Research Society 1986

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References

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