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Ion-beam sputter deposition process for Y1Ba2Cu3O7-δ thin-film structures

Published online by Cambridge University Press:  03 March 2011

J-P. Krumme ,
V. Doormann ,
F. Welz ,
O. Dösssel  and
H. van Hal
J-P. Krumme
Affiliation:
Philips GmbH Forschungslaboratorien, Forschungsabteilung Technische Systeme Hamburg, Röntgenstrasse 24-26, D-22335 Hamburg, Germany
V. Doormann
Affiliation:
Philips GmbH Forschungslaboratorien, Forschungsabteilung Technische Systeme Hamburg, Röntgenstrasse 24-26, D-22335 Hamburg, Germany
F. Welz
Affiliation:
Philips GmbH Forschungslaboratorien, Forschungsabteilung Technische Systeme Hamburg, Röntgenstrasse 24-26, D-22335 Hamburg, Germany
O. Dösssel
Affiliation:
Philips GmbH Forschungslaboratorien, Forschungsabteilung Technische Systeme Hamburg, Röntgenstrasse 24-26, D-22335 Hamburg, Germany
H. van Hal
Affiliation:
Philips Research, Natuurkundig Laboratorium, P.O. Box 80000, NL-5600 JA Eindhoven, The Netherlands
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Abstract

Ion-beam sputter deposition (IBS) has been developed to a fully oxygen-compatible technology for growth of complex oxides, such as Y1Ba2Cu3O7−δ (YBCO) thin films. The IBS system consists of an rf-plasma ion source with molybdenum grids for sputtering, a dc-plasma electron source for space charge compensation, stoichiometric YBCO and NGO targets, a beam chopper with BaO2, Cu, and Nd blades for stoichiometry control, and an ECR-oxygen-plasma source for in situ film oxidation and photoresist removal. Due to its complexity the IBS process is fully computer-controlled. A salient feature of IBS is the excellent crystallographic and morphological properties of thin (100)/(010)- and (103)-oriented YBCO films on SrTiO3 (STO) and NdGaO3 (NGO) substrates. Sharp interfaces and good superconducting properties render this technology feasible for the fabrication of SIS-ramp-junction SQUID's.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 11 , November 1994 , pp. 2747 - 2760
Copyright
Copyright © Materials Research Society 1994

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