Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-28T22:19:50.090Z Has data issue: false hasContentIssue false
  • English
  • Français

Kinetics of borosilicate glass deposition

Published online by Cambridge University Press:  03 March 2011

Joseph J. Biernacki ,
Pravin Kannan ,
Harry Meyer  and
Criag Blue
Joseph J. Biernacki*
Affiliation:
Tennessee Technological University, Cookeville, Tennessee 38505
Pravin Kannan
Affiliation:
Tennessee Technological University, Cookeville, Tennessee 38505
Harry Meyer
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Criag Blue
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
*
a)Address all correspondence to this author. e-mail: jbiernacki@tntech.edu
Get access

Abstract

The kinetics of borosilicate glass film deposition on silicon using boron nitride as a solid source was investigated. Experimental data on the thickness of deposited films as a function of temperature and process times under controlled atmospheric conditions was obtained. A 33-kW rapid thermal processing infrared furnace was used to minimize temperature and gas phase transients experienced on the commercial scale. The thickness and composition of the borosilicate glass films were measured using scanning Auger spectroscopy, and the thickness of the films as a function of time for various temperatures are presented. The results suggest a rapid transition to diffusion-controlled deposition with an activation energy of 2.77 ± 0.5 eV. The partial pressure of water vapor was found to have a potentially significant effect on the rate of film growth.

Keywords

GlassAuger electron spectroscopyDiffusion
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 3 , March 2004 , pp. 872 - 879
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Meyappan, M.Computational Modeling in Semiconductor Processing (Artech House, Boston, 1995), p. 1.Google Scholar
2Cossitt, H. St. Gobain Boron Nitride (private communication, 2003).Google Scholar
3Monkowski, J. and Stach, J.Solid State Technology, 38–43 November 1976.Google Scholar
4Johnson, D.L., Thesis, M.S The Pennsylvania State University (1978).Google Scholar
5Stach, J. and Turley, A.J. Electrochem. Soc. 121 722 – 724 (1974).Google Scholar
6Arai, E., Nakamura, H. and Terunuma, Y.J. Electrochem. Soc: Solid-State Science and Technology 120 980 (1973).CrossRefGoogle Scholar
7Pignatel, G. and Queirolo, G.Thin Solid Films 67 233 (1980).Google Scholar
8Masetti, G., Solmi, S. and Soncini, G.Solid State Electron. 19 545 (1976).CrossRefGoogle Scholar
9Kruest, J.R.,M.S. Thesis The Pennsylvania State University (1976).Google Scholar
10Subramanian, R., M.S.Thesis Tennessee Technological University (2001).Google Scholar
11Rupprecht, D. and Stach, J.J. Electrochem. Soc. 120 1266 (1973).CrossRefGoogle Scholar
12Hsu, T.R.MEMS & Microsystems Design and Manufacture, 1st ed. (McGraw-Hill, New York, 2002), p. 284.Google Scholar
13Charles, R.J. and Wagstaff, F.E.J. Am. Ceram. Soc. 51 16 (1968).Google Scholar
14Pignatel, G. and Queirolo, G.J. Electrochem. Soc. 126 1805 (1979).CrossRefGoogle Scholar