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Lattice distortion effects on electrical switching in epitaxial thin film NdNiO3

Published online by Cambridge University Press:  03 March 2011

J.F. DeNatale  and
P.H. Kobrin
J.F. DeNatale
Affiliation:
Rockwell Science Center, Thousand Oaks, California 91360
P.H. Kobrin
Affiliation:
Rockwell Science Center, Thousand Oaks, California 91360
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Abstract

Crystalline thin films of NdNiO3 have been epitaxially grown on the (100) face of single-crystal LaAlO3 substrates. These films exhibit the characteristic reversible change in electrical conductivity with temperature previously observed in bulk polycrystalline material. The temperature of the electrical transition in the epitaxial thin films was lower than reported for the bulk polycrystalline ceramics. This effect is attributed to lattice strains associated with the film processing and interfacial lattice matching constraints.

Type
Rapid Communication
Information
Journal of Materials Research , Volume 10 , Issue 12 , December 1995 , pp. 2992 - 2995
Copyright
Copyright © Materials Research Society 1995

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References

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