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Low crystallization temperature and unusual switching properties of ferroelectric Nb-doped Bi4Ti3O12 thin films prepared by rapid thermal annealing

Published online by Cambridge University Press:  31 January 2011

Jong Kuk Kim ,
Sang Su Kim  and
Jinheung Kim
Jong Kuk Kim
Affiliation:
Department of Chemical Technology, Institute of Basic Science, Changwon National University, Changwon, Kyungnam, 641-773, Korea
Sang Su Kim
Affiliation:
Department of Physics, Institute of Basic Science, Changwon National University, Changwon, Kyungnam, 641-773, Korea
Jinheung Kim
Affiliation:
Department of Chemical Technology, Institute of Basic Science, Changwon National University, Changwon, Kyungnam, 641-773, Korea
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Abstract

Nb-doped Bi4Ti3O12 (Nb-BIT) ferroelectric thin films were prepared in the presence of a nonionic surfactant (pluronic P123) added as an additive to the sol solution and by rapid thermal annealing (RTA). The film annealed at the relatively low temperature of 600 °C was well crystallized and showed good ferroelectricity. The switching charge of capacitors with polarization reversal rapidly increased with a large amplitude and low frequency of the applied pulse, and gradually decreased with a small amplitude and high frequency. The remanent polarization (2Pr) after subjecting the Nb-BIT capacitors to 108 read/write cycles was 46 μC/cm2, which is remarkably higher than 20 μC/cm2 observed in the initial state. These phenomena seem to appear by the presence of space charges trapped after heat treatment by the RTA process.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 8 , August 2003 , pp. 1884 - 1888
Copyright
Copyright © Materials Research Society 2003

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References

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