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Material aspects of wide temperature range amplifier design in SiC bipolar technologies

Published online by Cambridge University Press:  26 September 2016

Raheleh Hedayati  and
Carl-Mikael Zetterling
Raheleh Hedayati*
Affiliation:
School of Information and Communication Technology, KTH Royal Institute of Technology, Kista 164 40, Sweden
Carl-Mikael Zetterling
Affiliation:
School of Information and Communication Technology, KTH Royal Institute of Technology, Kista 164 40, Sweden
*
a) Address all correspondence to this author. e-mail: rahelehh@kth.se, bellman@kth.se
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Abstract

Silicon carbide (SiC) is the main semiconductor alternative for low loss high voltage devices. The wide energy band gap also makes it suitable for extreme environment electronics, including very high temperatures. Operating integrated electronics at 500–600 °C poses several materials challenges. However, once electronics is available for these high temperatures, the added challenge is designing integrated circuits capable of operating in the entire range from room temperature to 500 °C. Circuit designers have to take into account parameter variations of resistors and transistors, and models are needed for several temperatures. A common circuit design technique to manage parameter variations between different transistors, without wide temperature variations, is to use negative feedback in amplifier circuits. In this paper we show that this design technique is also useful for adapting to temperature changes during operation. Two different amplifier designs in SiC are measured and simulated from room temperature up to 500 °C.

Keywords

semiconductor devicesmicroelectronicselectrical properties
Type
Invited Feature Papers
Information
Journal of Materials Research , Volume 31 , Issue 19 , 14 October 2016 , pp. 2928 - 2935
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Copyright
Copyright © Materials Research Society 2016 

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