Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-30T20:26:07.244Z Has data issue: false hasContentIssue false
  • English
  • Français

Metal film deposition by laser breakdown chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

T.R. Jervis  and
L.R. Newkirk
T.R. Jervis
Affiliation:
Materials Science and Technology Division, Mailstop E-549, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
L.R. Newkirk
Affiliation:
Materials Science and Technology Division, Mailstop E-549, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Get access

Abstract

Dielectric breakdown of gas mixtures can be used to deposit thin films by chemical vapor deposition with appropriate control of flow and pressure conditions to suppress gas-phase nucleation and particle formation. Using a pulsed CO2 laser operating at 10.6 μ where there is no significant resonant absorption in any of the source gases, homogeneous films from several gas-phase precursors have been sucessfully deposited by gas-phase laser pyrolysis. Nickel and molybdenum from the respective carbonyls representing decomposition chemistry and tungsten from the hexafluoride representing reduction chemistry have been demonstrated. In each case the gas precursor is buffered with argon to reduce the partial pressure of the reactants and to induce breakdown. Films have been characterized by Auger electron spectroscopy, x-ray diffraction, transmission electron microscopy, pull tests, and resistivity measurements. The highest quality films have resulted from the nickel depositions. Detailed x-ray diffraction analysis of these films yields a very small domain size consistent with the low temperature of the substrate and the formation of metastable nickel carbide. Transmission electron microscopy supports this analysis.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 3 , June 1986 , pp. 420 - 424
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Allen, S. D., J. Appl. Phys. 52, 6501 (1981).Google Scholar
2Ehrlich, D. J. and Tsao, J. Y., J. Vac. Sci. Technol. B 1, 969 (1983).CrossRefGoogle Scholar
3Emery, K., Boyer, P. K., Thompson, L. R., Solanki, R., Zarnani, R., and Collins, G. J., Proc. SPIE Int. Soc. Opt. Eng. 459, 9 (1984).Google Scholar
4Meunier, M., Gattuso, T. R., Adler, D., and Haggerty, J. S., Appl. Phys. Lett. 43, 273 (1983).CrossRefGoogle Scholar
5Bilenchi, R., Gianinoni, I., Musci, M., and Murri, R., Proc. of the 4th European Conference on Chemical Vapor Deposition, Eindhoven, 1983, p. 194.Google Scholar
6Ronn, A. M., Sci. Am. 240, 114 (1979).CrossRefGoogle Scholar
7Shin, S. M., Draper, C. W., Mochel, M. E., and Rigsbee, J. M., Mater. Lett. 3, 265 (1985).CrossRefGoogle Scholar
8Jervis, T. R., J. Appl. Phys. 58, 1400 (1985).CrossRefGoogle Scholar
9Jervis, T. R. and Newkirk, L. R., in Extended Abstracts, Beam Induced Chemical Processes, edited by Gutfeld, R. J. von, Greene, J. E., and Schlossberg, H. (Materials Research Society, Pittsburgh, PA, 1985), p. 7.Google Scholar
10Hansen, M., Constitution of Binary Alloys (McGraw-Hill, New York, 1958); supplements by R. P. Elliott (1965) and F. A. Shunk (1969).CrossRefGoogle Scholar
11Nagakura, S., J. Phys. Soc. Jpn. 12, 482 (1957).Google Scholar