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Metallization strategies for In2O3-based amorphous oxide semiconductor materials

Published online by Cambridge University Press:  03 July 2012

Sunghwan Lee ,
Keunhan Park  and
David C. Paine
Sunghwan Lee
Affiliation:
School of Engineering, Brown University, Providence, Rhode Island 02912
Keunhan Park
Affiliation:
Department of Mechanical, Industrial and Systems Engineering, University of Rhode Island, Kingston, Rhode Island 02881
David C. Paine*
Affiliation:
School of Engineering, Brown University, Providence, Rhode Island 02912
*
a)Address all correspondence to this author. e-mail: david_paine@brown.edu
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Abstract

Amorphous oxide semiconductors based on indium oxide [e.g., In–Zn–O (IZO) and In–Ga–Zn–O (IGZO)] are of interest for use in thin-film transistor (TFT) applications. We report that the stability of amorphous In–Zn–O (a-IZO) used in TFT applications depends, in part, on the metallization materials used to form the source and drain contacts. A thermodynamics-based approach to the selection of IZO metallization materials is presented along with a study of the microstructural stability of a-IZO metallized with Mo and Ti. In situ transmission electron microscopy (TEM), x-ray diffraction, and atomic force microscopy studies are presented that show that the crystallization temperature of a-IZO metallized with Ti is sharply reduced (to 200 °C), while a-IZO metallized with Mo remains amorphous. The effects of the unstable Ti/IZO interface are shown to include: vacancy injection, enhanced amorphous-to-crystal transformation kinetics, interfacial oxide formation, and the lateral growth on adjacent IZO of rutile TiO2 needles.

Keywords

Ti/IZOMo/IZO contact metallizationamorphous oxide semiconductorsamorphous/crystalline structurethin film transistors
Type
Articles
Information
Journal of Materials Research , Volume 27 , Issue 17: Focus Issue: Oxide Semiconductors , 14 September 2012 , pp. 2299 - 2308
Copyright
Copyright © Materials Research Society 2012

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