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Nitrogen plasma source ion implantation for corrosion protection of aluminum 6061-T4

Published online by Cambridge University Press:  31 January 2011

J. H. Booske
Affiliation:
Engineering Research Center for Plasma-Aided Manufacturing, University of Wisconsin–Madison, Madison, Wisconsin 53706-1608
L. Zhang
Affiliation:
Engineering Research Center for Plasma-Aided Manufacturing, University of Wisconsin–Madison, Madison, Wisconsin 53706-1608
W. Wang
Affiliation:
Engineering Research Center for Plasma-Aided Manufacturing, University of Wisconsin–Madison, Madison, Wisconsin 53706-1608
K. Mente
Affiliation:
Engineering Research Center for Plasma-Aided Manufacturing, University of Wisconsin–Madison, Madison, Wisconsin 53706-1608
N. Zjaba
Affiliation:
Engineering Research Center for Plasma-Aided Manufacturing, University of Wisconsin–Madison, Madison, Wisconsin 53706-1608
C. Baum
Affiliation:
Engineering Research Center for Plasma-Aided Manufacturing, University of Wisconsin–Madison, Madison, Wisconsin 53706-1608
J. L. Shohet
Affiliation:
Engineering Research Center for Plasma-Aided Manufacturing, University of Wisconsin–Madison, Madison, Wisconsin 53706-1608
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Abstract

It is established that nitridation of aluminum (Al) 6061-T4 by plasma source ion implantation (PSII) can dramatically enhance the pitting corrosion resistance of this alloy in marine environments (i.e., chlorine-ion-bearing aqueous solutions or humid atmospheres). Corrosion tests and microstructure analyses establish that the mechanism for successful passivation against chloride-induced pitting corrosion involves the formation of a multilayered microstructure, including the presence of a continuous layer of aluminum-nitride (AlN). Important process variables are the implantation voltage and the nitrogen dose (or total implantation time), as these two variables establish the implanted nitrogen concentration. Too high or too low an implanted nitrogen concentration will not yield the continuous AlN layer required for good corrosion resistance. PSII is attractive for this application as it provides for uniform, conformal implantation of irregularly shaped objects without masking, beam rastering, or object rotation.

Type
Articles
Copyright
Copyright © Materials Research Society 1997

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