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Nucleation and growth of metamorphic epitaxial aluminum on silicon (111) 7 × 7 and $\sqrt 3 \times \sqrt 3$ surfaces

Published online by Cambridge University Press:  21 August 2017

Ashish Alexander ,
Brian M. McSkimming ,
Bruce Arey ,
Ilke Arslan  and
Christopher J.K. Richardson
Ashish Alexander*
Affiliation:
Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740, USA
Brian M. McSkimming
Affiliation:
Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740, USA
Bruce Arey
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352, USA
Ilke Arslan
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352, USA
Christopher J.K. Richardson
Affiliation:
Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740, USA
*
a)Address all correspondence to this author. e-mail: aalex@lps.umd.edu
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Abstract

The nucleation and growth of Al on 7 × 7 and $\sqrt 3 \times \sqrt 3$R30 Al reconstructed Si(111) that result in strain-free Al overgrown films grown with an atomically abrupt metamorphic interface are compared. The reconstructed surfaces and abrupt strain relaxations are verified using reflection high-energy electron diffraction. The topography of evolution is examined with atomic force microscopy. The growth of Al on both the surfaces exhibits 3D island growth, but the island evolution of growth is dramatically different. On the 7 × 7 surface, mounds formed are uniformly distributed across the substrate, and growth appears to proceed uniformly. Alternatively, on the $\sqrt 3 \times \sqrt 3$R30 surface, Al atoms exhibit a clear preference to form mounds near the step edges. During Al growth, mounds increase in size and number, expanding out from step edges until they cover the whole substrate. Consistent expression of a mounded nucleation and growth mode imparts a physical limitation to the achievable surface roughness that may impact the ultimate performance of layered devices such as Josephson junctions that are critical components of superconducting quantum circuits.

Keywords

nucleation & growthmolecular beam epitaxy (MBE)thin film
Type
Invited Articles
Information
Journal of Materials Research , Volume 32 , Issue 21: Focus Issue: Jan van der Merwe: Epitaxy and the Computer Age , 14 November 2017 , pp. 4067 - 4075
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Copyright
Copyright © Materials Research Society 2017 

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Footnotes

Contributing Editor: Artur Braun

References

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