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Optical and electrical properties of solid photocatalyst Bi2InNbO7

Published online by Cambridge University Press:  31 January 2011

Zhigang Zou ,
Jinhua Ye  and
Hironori Arakawa
Zhigang Zou
Affiliation:
National Institute of Materials and Chemical Research, 1-1 Higashi, Tsukuba, Ibaraki 305, Japan
Jinhua Ye
Affiliation:
National Research Institute for Metals, 1–2-1 Sengen, Tsukuba, Ibaraki 305, Japan
Hironori Arakawa
Affiliation:
National Institute of Materials and Chemical Research, 1-1 Higashi, Tsukuba, Ibaraki 305, Japan
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Abstract

A polycrystalline sample of Bi2InNbO7 was synthesized by a solid-state reaction and characterized by powder x-ray diffraction and Rietveld structure refinement. The optical absorption and electrical properties of Bi2InNbO7 were investigated. It was found that the Bi2InNbO7 compound exhibited a direct gap semiconducting behavior. Conductivity measurement showed the compound had an activation energy of 2.62(5) eV. Ultraviolet–visible diffuse reflectance spectroscopy measurement revealed that the band gap of Bi2InNbO7 is about 2.7(4) eV.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 15 , Issue 10 , October 2000 , pp. 2073 - 2075
Copyright
Copyright © Materials Research Society 2000

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